GTVA104001FA Arkusz danych(PDF) - Cree, Inc

Zakładka z wyszukiwarką danych komponentów

ALLDATASHEET.PL

X

GTVA104001FA Arkusz danych (PDF) - Cree, Inc

GTVA104001FA Datasheet PDF - Cree, Inc


Numer części	GTVA104001FA

Pobierz	GTVA104001FA Pobierz

Rozmiar pliku	314.29 Kbytes

Page	4 Pages

Producent	CREE [Cree, Inc]

Strona internetowa	http://www.cree.com/

Logo

Szczegółowy opis

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 ??1215 MHz

GTVA104001FA Datasheet (PDF)

Go To PDF Page

Pobierz Arkusz danych

GTVA104001FA Datasheet PDF - Cree, Inc


Numer części	GTVA104001FA

Pobierz	GTVA104001FA Click to download

Rozmiar pliku	314.29 Kbytes

Page	4 Pages

Producent	CREE [Cree, Inc]

Strona internetowa	http://www.cree.com/

Logo

Szczegółowy opis	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 ??1215 MHz

GTVA104001FA Arkusz danych (HTML) - Cree, Inc

GTVA104001FA Datasheet HTML 1Page - Cree, Inc

GTVA104001FA Datasheet HTML 2Page - Cree, Inc

GTVA104001FA Datasheet HTML 3Page - Cree, Inc

GTVA104001FA Datasheet HTML 4Page - Cree, Inc

Podobny numer części - GTVA104001FA

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	GTVA101K42EV	1Mb / 4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 ??1215 MHz
WOLFSPEED, INC.	GTVA101K42EV	2Mb / 14P	Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, DC – 1400 MHz Rev. 4.5, March 2021
Cree, Inc	GTVA107001EC	253Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz
Cree, Inc	GTVA107001EC-V1-R0	253Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz
WOLFSPEED, INC.	GTVA107001EC-V1-R0	638Kb / 8P	High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Rev. 3.1, 2021-10-14

Podobny opis - GTVA104001FA

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	GTVA107001EC	253Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz
	GTVA101K42EV	1Mb / 4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 ??1215 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
WOLFSPEED, INC.	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
WOLFSPEED, INC.	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
Cree, Inc	GTVA126001EC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
Cree, Inc	GTVA220701FA	581Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
WOLFSPEED, INC.	GTVA220701FA	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27

O Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

Link URL

Polityka prywatności

ALLDATASHEET.PL

Czy Alldatasheet okazała się pomocna? [ DONATE ]

O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów
All Rights Reserved©Alldatasheet.com

Mirror Sites English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz

Family Site : ic2ic.com | icmetro.com