General Description
This N-Channel enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
   
Features
• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V
                        RDS(on) = 0.60 Ω @ VGS = 2.7 V.
• Low gate charge (1.64 nC typical)
• Very low level gate drive requirements allowing direct
    operation in 3V circuits (VGS(th) < 1.5V).
• Gate-Source Zener for ESD ruggedness
    (>6kV Human Body Model).
• Compact industry standard SC70-6 surface mount
    package.
   
Applications
• Load switch
• Battery protection
• Power management