General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. Features • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge (typical 4.0 nC) • Low Crss ( typical 4.7 pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability
|