General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supply. Features • 3.5A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 15 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
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