| Producent | Numer części | Arkusz danych | Szczegółowy opis |
NEC |
2SC3583
|
103Kb/8P
|
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Guangdong Kexin Industr... |
2SC3583
|
40Kb/1P
|
NPN Silicon Epitaxial Transistor
|
Renesas Technology Corp |
2SC3583
|
321Kb/10P
|
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
California Eastern Labs |
2SC3583
|
1Mb/5P
|
MICROWAVE LOW NOISE AMPLIFIER
|
Inchange Semiconductor ... |
2SC3583
|
300Kb/6P
|
Low Noise and High Gain
|
Renesas Technology Corp |
2SC3583
|
321Kb/10P
|
SILICON TRANSISTOR
|
| Search Partnumber :
Start with "2SC3583" -
Total : 22 ( 1/2 Page) |
Renesas Technology Corp |
2SC3583
|
321Kb/10P |
SILICON TRANSISTOR
|
Isahaya Electronics Cor... |
2SC3580
|
120Kb/3P |
SMALL-SIGNAL TRANSISTOR
|
|
2SC3581
|
121Kb/3P |
SMALL-SIGNAL TRANSISTOR
|
NEC |
2SC3582
|
99Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Inchange Semiconductor ... |
2SC3582
|
310Kb/6P |
Low Noise and High Gain
|
California Eastern Labs |
2SC3585
|
1Mb/5P |
MICROWAVE LOW NOISE AMPLIFIER
|
Renesas Technology Corp |
2SC3585
|
321Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
Guangdong Kexin Industr... |
2SC3585
|
38Kb/1P |
NPN Silicon Epitaxial Transistor
|
NEC |
2SC3585
|
103Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
Inchange Semiconductor ... |
2SC3585
|
308Kb/6P |
Low Noise and High Gain
|
NEC |
2SC3585-T1B
|
103Kb/8P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
Renesas Technology Corp |
2SC3585
|
321Kb/10P |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
NEC |
2SC3587
|
91Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
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