Producent | Numer części | Arkusz danych | Szczegółowy opis |
Siemens Semiconductor G... |
BAR81
|
46Kb/3P
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Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
|
Infineon Technologies A... |
BAR81
|
23Kb/2P
|
Silicon RF Switching Diodes
Aug-21-2001
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Siemens Semiconductor G... |
BAR81W
|
30Kb/4P
|
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
|
Infineon Technologies A... |
BAR81W
|
407Kb/4P
|
Silicon RF Switching Diode
Dec-20-2002
|
Guangdong Kexin Industr... |
BAR81W
|
36Kb/1P
|
Silicon RF Switching Diode
|
Infineon Technologies A... |
BAR81W
|
75Kb/6P
|
Silicon RF Switching Diode
2007-04-19
|
BAR81W
|
824Kb/6P
|
Silicon RF Switching Diode
2011-06-14
|
BAR81WH6327
|
824Kb/6P
|
Silicon RF Switching Diode
2011-06-14
|
BAR81
|
75Kb/6P
|
Silicon RF Switching Diode
2007-04-19
|