# BD201F/203F Silicon NPN Power Transistor

## Description
️· Collector-Emitter Breakdown Voltage: 45V (BD201F), 60V (BD203F)
️· Complement to Type BD202F/204F
️· Designed for hi-fi equipment delivering 1.5-15W into 4Ω or 8Ω load.

## Absolute Maximum Ratings (Ta = 25°C)
️· VCBO: 60V
️· VCEO: 60V
️· VEBO: 45V (BD201F), 60V (BD203F)
️· IC: 5A (BD201F), 8A (BD203F)
️· I CM: 12A
️· IB: 3A
️· PC: 32W
️· Tj: 150°C
️· Tstg: -65°C to 150°C

## Thermal Characteristics
️· Rthj-c: 6.3 °C/W

## Pinout
️· 1: Base
️· 2: Collector
️· 3: Emitter
️· Package: TO-220Fa

## Dimensions (mm)
️· A: 16.85 - 17.15
️· B: 9.90 - 10.10
️· C: 4.35 - 10.10
️· D: 0.75 - 0.80
️· F: 3.20 - 3.40
️· G: 6.90 - 10.10
️· J: 0.45 - 0.75
️· K: 13.35 - 13.65
️· L: 1.10 - 1.30
️· N: 4.98 - 10.10
️· R: 2.95 - 2.90
️· S: 2.70 - 2.05

## Electrical Characteristics (Tc = 85°C unless otherwise specified)
️· V(BR)CEO: 45V (BD201F), 60V (BD203F)
️· V(BR)CBO: 60V
️· V(BR)EBO: 60V
️· Vce(sat): 5V
️· Vbe(sat): 7.0V
️· Vce(sat): 30V
️· ICEO: 1mA
️· ICBO: 0.2mA
️· IEBO: 1.0mA
️· hFE: 0.5
️· ft: 1MHz

## Switching Times
️· ton: 1u s
️· toff: 4 u s