# MFE201 thru MFE203 - Semiconductor Device Summary

## Maximum Ratings

️· Drain-Source Voltage (VDSX): 20 Vdc
️· Drain-Gate Voltage (VDGI): 30 Vdc
️· Gate Current (IGI): ±10 mAdc
️· Drain Current – Continuous (ID): 50 mAdc
️· Total Power Dissipation (PD): 360 mW (at TA = 25°C, derate above)
️· Storage Channel Temperature Range: -65 to +175 °C
️· Junction Temperature Range: -65 to +175 °C
️· Lead Temperature: 300 °C (for 1/16" from seated surface, 10 seconds)

## Electrical Characteristics (TA = 25°C)

Off Characteristics

️· Drain-Source Breakdown Voltage (V(BR)OSX): 20 Vdc
️· Gate 1 – Source Breakdown Voltage (V(BR)G1SO): ±6.0 Vdc
️· Gate 2 – Source Breakdown Voltage (V(BR)G2SO): ±6.0 Vdc

️· Gate 1 to Source Cutoff Voltage (VQ1S(off)): -0.5 Vdc
️· Gate 2 to Source Cutoff Voltage (VG2S(off)): -0.2 Vdc
️· Gate 1 Leakage Current (IG1SS): ±0.04 mAdc
️· Gate 2 Leakage Current (IG2SS): ±0.05 mAdc

On Characteristics

️· Zero-Gate Voltage Drain Current (IDSS): 6.8, 3.0, and 13 mAdc (for MFE201, MFE202, MFE203)

Small-Signal Characteristics

️· Forward Transfer Admittance: 8J), 7.0, (for MFE201, MFE202, MFE203)
️· Input Capacitance (Ciss): 12.8, 12.S (for MFE201, MFE202, MFE203)
️· Output Capacitance (Coss): 4.3, 1.7 (for MFE201, MFE202, MFE203)
️· Reverse Transfer Capacitance (Crss): 0.014 (for MFE201, MFE202, MFE203)