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C45C8 Datasheet with Chat AI
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  • # Example questions: ➢ What is the recommended operating junction temperature range (tj) for the c45c8 transistor?
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    ➢ What is the typical value for the dc current gain (hfe) when the collector current (ic) is 0.2a and the collector-emitter voltage (vce) is 1v?

  • Part No.C45C8
    ManufacturerETC1
    Size157 Kbytes
    Pages4 pages
    DescriptionMedium Power Switching and Amplifier Applications
    Datasheet Summary with AI

    # C45C8 PNP Plastic Power Transistor - TO-220

    ## Description

    ️· Plastic package
    ️· Medium power switching and amplifier applications
    ️· Complementary to C44C8

    ## Absolute Maximum Ratings

    ️· VCES (Collector-Emitter Voltage): 70V
    ️· VCEO (Collector-Emitter Voltage): 60V
    ️· IC (Collector Current Continuous): 4A
    ️· ICM (Collector Current Peak): 6A
    ️· IB (Base Current Continuous): 2A
    ️· Operating & Storage Junction Temperature: -55°C to +150°C
    ️· Junction to Ambient Thermal Resistance: 75 °C/W
    ️· Junction to Case Thermal Resistance: 4.2 °C/W

    ## Electrical Characteristics

    ️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 60V (IC=100mA, IB=0)
    ️· ICES (Collector Cut-Off Current): 10µA (VCE=Rated VCES)
    ️· IEBO (Emitter Cut-Off Current): 100µA (VEB=5V, IC=0)
    ️· hFE (DC Current Gain): 40-120 (IC=0.2A, VCE=1V); 20 (IC=1A, VCE=1V)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.5V (IC=1A, IB=50mA)
    ️· VBE(sat) (Base-Emitter Saturation Voltage): 1.3V (IC=1A, IB=100mA)
    ️· Ccbo (Collector Capacitance): 125pF (VCB=10V, IE=0, f=1MHz)
    ️· fT (Current Gain Bandwidth Product): 40 MHz (VCE=4V, IC=20mA)

    ## Physical Characteristics

    ️· TO-220 package
    ️· Pin 1: Base
    ️· Pin 2: Collector
    ️· Pin 3: Emitter
    ️· Dimensions: See datasheet for detailed specifications.

    ## Packing

    ️· Available in tubes and polybags
    ️· Weight varies by quantity

    # C45C8 PNP Plastic Power Transistor - TO-220

    ## Description

    ️· Plastic package
    ️· Medium power switching and amplifier applications
    ️· Complementary to C44C8

    ## Absolute Maximum Ratings

    ️· VCES (Collector-Emitter Voltage): 70V
    ️· VCEO (Collector-Emitter Voltage): 60V
    ️· IC (Collector Current Continuous): 4A
    ️· ICM (Collector Current Peak): 6A
    ️· IB (Base Current Continuous): 2A
    ️· Operating & Storage Junction Temperature: -55°C to +150°C
    ️· Junction to Ambient Thermal Resistance: 75 °C/W
    ️· Junction to Case Thermal Resistance: 4.2 °C/W

    ## Electrical Characteristics

    ️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 60V (IC=100mA, IB=0)
    ️· ICES (Collector Cut-Off Current): 10µA (VCE=Rated VCES)
    ️· IEBO (Emitter Cut-Off Current): 100µA (VEB=5V, IC=0)
    ️· hFE (DC Current Gain): 40-120 (IC=0.2A, VCE=1V); 20 (IC=1A, VCE=1V)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.5V (IC=1A, IB=50mA)
    ️· VBE(sat) (Base-Emitter Saturation Voltage): 1.3V (IC=1A, IB=100mA)
    ️· Ccbo (Collector Capacitance): 125pF (VCB=10V, IE=0, f=1MHz)
    ️· fT (Current Gain Bandwidth Product): 40 MHz (VCE=4V, IC=20mA)

    ## Physical Characteristics

    ️· TO-220 package
    ️· Pin 1: Base
    ️· Pin 2: Collector
    ️· Pin 3: Emitter
    ️· Dimensions: See datasheet for detailed specifications.

    ## Packing

    ️· Available in tubes and polybags
    ️· Weight varies by quantity

    Part No.C45C8
    ManufacturerETC1
    Size157 Kbytes
    Pages4 pages
    DescriptionMedium Power Switching and Amplifier Applications
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