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Hello, Please ask a question about C45C8 Datasheet
# Example questions:
➢ What is the recommended operating junction temperature range (tj) for the c45c8 transistor?
➢ What is the maximum collector current (ic) that the c45c8 transistor can continuously handle?
➢ What is the typical value for the dc current gain (hfe) when the collector current (ic) is 0.2a and the collector-emitter voltage (vce) is 1v?
# C45C8 PNP Plastic Power Transistor - TO-220
## Description
️· Plastic package
️· Medium power switching and amplifier applications
️· Complementary to C44C8
## Absolute Maximum Ratings
️· VCES (Collector-Emitter Voltage): 70V
️· VCEO (Collector-Emitter Voltage): 60V
️· IC (Collector Current Continuous): 4A
️· ICM (Collector Current Peak): 6A
️· IB (Base Current Continuous): 2A
️· Operating & Storage Junction Temperature: -55°C to +150°C
️· Junction to Ambient Thermal Resistance: 75 °C/W
️· Junction to Case Thermal Resistance: 4.2 °C/W
## Electrical Characteristics
️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 60V (IC=100mA, IB=0)
️· ICES (Collector Cut-Off Current): 10µA (VCE=Rated VCES)
️· IEBO (Emitter Cut-Off Current): 100µA (VEB=5V, IC=0)
️· hFE (DC Current Gain): 40-120 (IC=0.2A, VCE=1V); 20 (IC=1A, VCE=1V)
️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.5V (IC=1A, IB=50mA)
️· VBE(sat) (Base-Emitter Saturation Voltage): 1.3V (IC=1A, IB=100mA)
️· Ccbo (Collector Capacitance): 125pF (VCB=10V, IE=0, f=1MHz)
️· fT (Current Gain Bandwidth Product): 40 MHz (VCE=4V, IC=20mA)
## Physical Characteristics
️· TO-220 package
️· Pin 1: Base
️· Pin 2: Collector
️· Pin 3: Emitter
️· Dimensions: See datasheet for detailed specifications.
## Packing
️· Available in tubes and polybags
️· Weight varies by quantity
# C45C8 PNP Plastic Power Transistor - TO-220
## Description
️· Plastic package
️· Medium power switching and amplifier applications
️· Complementary to C44C8
## Absolute Maximum Ratings
️· VCES (Collector-Emitter Voltage): 70V
️· VCEO (Collector-Emitter Voltage): 60V
️· IC (Collector Current Continuous): 4A
️· ICM (Collector Current Peak): 6A
️· IB (Base Current Continuous): 2A
️· Operating & Storage Junction Temperature: -55°C to +150°C
️· Junction to Ambient Thermal Resistance: 75 °C/W
️· Junction to Case Thermal Resistance: 4.2 °C/W
## Electrical Characteristics
️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 60V (IC=100mA, IB=0)
️· ICES (Collector Cut-Off Current): 10µA (VCE=Rated VCES)
️· IEBO (Emitter Cut-Off Current): 100µA (VEB=5V, IC=0)
️· hFE (DC Current Gain): 40-120 (IC=0.2A, VCE=1V); 20 (IC=1A, VCE=1V)
️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.5V (IC=1A, IB=50mA)
️· VBE(sat) (Base-Emitter Saturation Voltage): 1.3V (IC=1A, IB=100mA)
️· Ccbo (Collector Capacitance): 125pF (VCB=10V, IE=0, f=1MHz)
️· fT (Current Gain Bandwidth Product): 40 MHz (VCE=4V, IC=20mA)
## Physical Characteristics
️· TO-220 package
️· Pin 1: Base
️· Pin 2: Collector
️· Pin 3: Emitter
️· Dimensions: See datasheet for detailed specifications.
## Packing
️· Available in tubes and polybags
️· Weight varies by quantity
| Part No. | C45C8 |
| Manufacturer | ETC1 |
| Size | 157 Kbytes |
| Pages | 4 pages |
| Description | Medium Power Switching and Amplifier Applications |
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