# Isc N-Channel MOSFET Transistor IRF3007L

## General Features

· To-262 package
· Low input capacitance and gate charge
· Low gate input resistance
· 100% avalanche tested
· Robust device performance and reliable operation

## Absolute Maximum Ratings (Ta=25℃)

· Drain-Source Voltage (VDSS): 75 V
· Gate-Source Voltage (VGSS): ±20 V
· Drain Current - Continuous (ID): 62 A (Tc=25℃), 44 A (Tc=100℃)
· Drain Current - Single Pulsed (IDM): 320 A
· Total Dissipation (PD): 120 W @ TC=25℃
· Max. Operating Junction Temperature (Tch): 175 ℃
· Storage Temperature (Tstg): -55~175 ℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)

· Drain-Source Breakdown Voltage (BVDSS): 75 V (VGS=0V; ID=0.25mA)
· Gate Threshold Voltage (VGS(th)): 2.0 - 3.5 V (VDS=VGS; ID=0.25mA)
· Drain-Source On-Resistance (RDS(on)): 10.5 - 12.6 mΩ (VGS=10V; ID=48A)
· Gate-Source Leakage Current (IGSS): ±0.2 μA (VGS= ±20V;VDS=0V)
· Drain-Source Leakage Current (IDSS): 20 μA (VDS=75V; VGS= 0V;Tj=25℃), 250 μA (VDS=60V; VGS= 0V;Tj=125℃)
· Diode Forward Voltage (VSDF): 1.3 V (ISD=48A, VGS = 0 Vs)

## Thermal Characteristics

· Channel-to-case thermal resistance (Rth(ch-c)): 1.25 ℃/W

## Important Notices

· Website: www.iscsemi.cn
· Trademark: isc & iscsemi is registered trademark.
· Products are intended for general electronic equipment.
· Not designed for specialized quality/reliability, hazardous environments, aerospace, or medical fields.
· No warranty or liability assumed for product suitability or application.