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    • Part No.HM8810E
    ManufacturerVBSEMI
    Size1Mb
    Pages8 pages
    DescriptionDual N-Channel MOSFET
    Datasheet Summary with AI

    # HM8810E Dual N-Channel MOSFET

    ## Features
    · TrenchFET® Power MOSFETs
    · Halogen-free option available
    · RoHS Compliant

    ## Electrical Characteristics
    · VDS (Drain-Source Voltage): 20V
    · RDS(on) (Drain-Source On-State Resistance): 0.024Ω @ VGS = 4.5V, 0.028Ω @ VGS = 2.5V
    · ID (Drain Current): 6.0A (TJ = 150°C), 5.2A (TA = 25°C)
    · VGS(th) (Gate Threshold Voltage): 0.5 - 1.5V

    ## Absolute Maximum Ratings (TA = 25°C)
    · VDS: 20V
    · VGS: ±12V
    · ID: 6.0A
    · PD (Power Dissipation): 1.5W (TA = 25°C)

    ## Thermal Resistance

    · RthJA (Junction-to-Ambient): 72-83 °C/W
    · RthJF (Junction-to-Foot): 55-70 °C/W

    ## Package
    · TSOP6

    # HM8810E Dual N-Channel MOSFET

    ## Features
    · TrenchFET® Power MOSFETs
    · Halogen-free option available
    · RoHS Compliant

    ## Electrical Characteristics
    · VDS (Drain-Source Voltage): 20V
    · RDS(on) (Drain-Source On-State Resistance): 0.024Ω @ VGS = 4.5V, 0.028Ω @ VGS = 2.5V
    · ID (Drain Current): 6.0A (TJ = 150°C), 5.2A (TA = 25°C)
    · VGS(th) (Gate Threshold Voltage): 0.5 - 1.5V

    ## Absolute Maximum Ratings (TA = 25°C)
    · VDS: 20V
    · VGS: ±12V
    · ID: 6.0A
    · PD (Power Dissipation): 1.5W (TA = 25°C)

    ## Thermal Resistance
    · RthJA (Junction-to-Ambient): 72-83 °C/W
    · RthJF (Junction-to-Foot): 55-70 °C/W

    ## Package
    · TSOP6

    Part No.HM8810E
    ManufacturerVBSEMI
    Size1Mb
    Pages8 pages
    DescriptionDual N-Channel MOSFET
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