# isc N-Channel MOSFET Transistor STF8NM60ND

## Features

· Drain Current (ID): 7A @ TC=25℃
· Drain-Source Voltage (VDSS): 600V (Min)
· Static Drain-Source On-Resistance (RDS(on)): 0.7Ω (Max)
· 100% Avalanche Tested
· Minimum Lot-to-Lot Variations for Robust Device Performance

## Applications

· Switching application

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	600	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	7	A
IDM	Drain Current-Single Pluse	28	A
PD	Total Dissipation @TC=25℃	25	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	5	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0; ID=1mA	600		V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=0.25mA	3	5	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=3.5A		0.7	Ω
IGSS	Gate-Body Leakage Current	VGS=±20V;VDS=0		±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS=Max rating; Tj=125℃		100	μA
VSD	Forward On-Voltage	IS=7A; VGS=0		1.3	V

## Notices

· Intended for general electronic equipment.
· Not designed for specialized quality/reliability or hazardous/aerospace/medical applications. Contact ISC for such use cases.
· ISC disclaims any warranty or liability arising from product use.



_isc website_ ： _www.iscsemi.com_