# isc N-Channel MOSFET Transistor APT20M16B2LL

## Features

· Drain Current: ID = 100A @ TC = 25°C
· Drain-Source Voltage: VDSS = 200V (Min)
· Static Drain-Source On-Resistance: RDS(on) = 0.016Ω (Max)
· 100% avalanche tested
· Minimum lot-to-lot variations for robust device performance

## Absolute Maximum Ratings (Ta=25°C)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	200	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	100	A
IDM	Drain Current-Single Pulse	400	A
PD	Total Dissipation @TC=25℃	694	W
TJ	Max. Operating Junction Temperature	-55~150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	0.18	℃/W

## Electrical Characteristics (TC=25°C unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 1.0; ID= 1.0mA	200		V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 2.5mA	3	5	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 50A		0.016	Ω
IGSS	Gate-Body Leakage Current	VGS= ±30V; VDS= 0		±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS= 200V; VGS= 0 <br>VDS= 160V; VGS= 0@TC=125℃		100<br>500	μA
VSD	Forward On-Voltage	IS=-100A; VGS= 0		1.3	V

## Notice

· Designed for use in switchmode power supplies and general purpose applications.
· ISC reserves the rights to make changes to the datasheet at any time.
· Intended for general electronic equipment; not for applications requiring specialized quality, reliability, hazardous environments, aerospace, or medical use. Contact ISC for these uses.
· ISC makes no warranty or guarantee regarding suitability for any particular purpose and disclaims any liability.