# isc N-Channel MOSFET Transistor 2SK3003

## Features

· Drain Current: ID = 18A @ TC = 25°C
· Drain-Source Voltage: VDSS = 200V (min)
· Static Drain-Source On-Resistance: RDS(on) = 0.175Ω (max)
· 100% Avalanche Tested
· Minimum Lot-to-Lot Variations

## Absolute Maximum Ratings (Ta = 25°C)

· Drain-Source Voltage (VDSS): 200V
· Gate-Source Voltage (VGS): ±20V
· Drain Current (ID): 18A
· Drain Current (Single Pulse) (IDM): 72A
· Total Dissipation (PD): 35W @ TC=25°C
· Max. Operating Junction Temperature (TJ): 150°C
· Storage Temperature (Tstg): -55~150°C

## Thermal Characteristics

· Thermal Resistance, Junction to Case (Rth j-c): 3.57 °C/W

## Electrical Characteristics (TC = 25°C unless otherwise specified)

· Drain-Source Breakdown Voltage (V(BR)DSS): 200V @ VGS=0; ID=0.1mA
· Gate Threshold Voltage (VGS(th)): 2-4V @ VDS=VGS; ID=1mA
· Drain-Source On-Resistance (RDS(on)): 0.175Ω @ VGS=10V; ID=9A
· Gate-Body Leakage Current (IGSS): ±100 nA @ VGS= ±20V; VDS=0
· Zero Gate Voltage Drain Current (IDSS): 100 μA @ VDS=200V; VGS=0
· Forward On-Voltage (VSD): 1.5V @ IS=18A; VGS=0

## Important Notices

· ISC reserves right to make changes without notification.
· Designed for use in switchmode power supplies and general purpose applications.
· Not designed for use in equipment requiring specialized quality/reliability or hazardous environments, aerospace, or medical field. Contact ISC for such applications.
· ISC makes no warranty or guarantee regarding suitability for any particular purpose and disclaims all liability.