# MOSFET Datasheet Summary

## Electrical Characteristics
DC Characteristics
· Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250µA): 400 V
· Gate Threshold Voltage (VDS = VGS, ID = 250µA): 2.0 - 4.0 V
· Zero Gate Voltage Drain Current (VDS = 400 V, VGS = 0 V): 1 µA
· Zero Gate Voltage Drain Current (VDS = 320 V, TC = 125°C): 10 µA
· Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.0 A): 0.44 - 0.55 Ω
· Forward Transconductance (VDS = 40 V, ID = 5.0 A): 9.0 S

AC Characteristics
· Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz): 1570 - 2040 pF
· Output Capacitance: 150 - 195 pF
· Reverse Transfer Capacitance: 15 - 20 pF
· Turn-On Delay Time (VDD = 200V, ID = 10.0 A, RG = 25Ω): 25 - 60 ns
· Turn-On Rise Time: 75 - 160 ns
· Turn-Off Delay Time: 115 - 240 ns
· Turn-Off Fall Time: 70 - 150 ns
· Total Gate Charge (VDS = 320 V, ID = 10.0A, VGS = 10 V): 38 - 50 nC

Source-Drain Diode Characteristics
· Maximum Continuous Drain-Source Diode Forward Current: 10 A
· Maximum Pulsed Drain-Source Diode Forward Current: 40 A
· Drain-Source Diode Forward Voltage (VGS = 0 V, IS = 10.0 A): 1.5 V
· Reverse Recovery Time (VGS = 0 V, IS = 10.0 A, dIF / dt = 100 A/µs): 225 ns
· Reverse Recovery Charge: 1.59 nC

## Physical Dimensions
· Dimensions provided in millimeters and inches
· Key dimensions (Min, Typ, Max):
- A: 9.7 - 10.1 mm
- B: 6.3 - 6.7 mm
- C: 9.0 - 9.47 mm
- D: 12.8 - 13.3 mm
- E: 1.2 - 1.4 mm
- G: 2.5 mm
- H: 3.0 - 3.4 mm
- K: 5.0 - 5.15 mm
- L: 2.2 - 2.6 mm
- N: 0.45 - 0.6 mm
- Ø: 3.6 mm