# WFF7N60 N-Channel MOSFET

## Features
· RDS(on) (Max 1.2 Ω) @ VGS = 10V
· Typical Gate Charge: 28nC
· High ruggedness & Improved dv/dt capability
· 100% Avalanche Tested
· Maximum Junction Temperature: 150°C

## Absolute Maximum Ratings
· Drain-Source Voltage (VDSS): 600V
· Continuous Drain Current (@TC=25°C): 7.0A
· Continuous Drain Current (@TC=100°C): 4.4A
· Pulsed Drain Current (IDM): 28A
· Gate-Source Voltage (VGS): ±30V
· Single Pulsed Avalanche Energy (EAS): 420mJ
· Operating/Storage Temperature Range: -55°C to 150°C

## Electrical Characteristics (@TC = 25°C)
· Breakdown Voltage (BVDSS): 600V

· Gate Threshold Voltage (VGS(th)): 2.0 - 4.0V
· Static Drain-Source On-State Resistance (RDS(ON)): 1.0 - 1.2 Ω @ VGS = 10V, ID = 3.5A

## Thermal Characteristics
· Thermal Resistance, Junction-to-Case (RθJC): 2.6 °C/W
· Thermal Resistance, Junction-to-Ambient (RθJA): 62.5 °C/W

## Package Information
· Package Type: TO-220F