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Hello, Please ask a question about IDC51D120T8M Datasheet
# Example questions:
➢ What is the maximum repetitive forward current (ifrm) specified for the idc51d120t8m diode?
➢ What is the storage environment recommendation for *open* mbb bags containing the idc51d120t8m, according to the document?
➢ What type of testing is recommended at the package level to fully validate the diode’s performance beyond wafer-level tests?
| Part No. | IDC51D120T8M |
| Manufacturer | INFINEON |
| Size | 981 Kbytes |
| Pages | 8 pages |
| Description | Emitter Controlled 4 Medium Power Technology |
1. Product Identification & Overview
️· Product: IDC51D120T8M
️· Type: Diode Chip
️· Technology: Emitter Controlled 4 Medium Power
️· Manufacturer: Infineon Technologies
️· Datasheet Revision: 2.1 (dated 09.04.2021)
2. Key Features & Applications
️· Features:
- 1200V Blocking Voltage (V<sub>RRM</sub>)
- 100A Forward Current (I<sub>Fn</sub>)
- 110µm Chip Thickness
- "Soft, fast switching" characteristic.
- Small temperature coefficient.
️· Recommended For: Low/Medium power modules
️· Applications: Low/medium power drives (likely power conversion, motor control, etc.)
3. Mechanical Specifications (Chip Dimensions)
️· Die Size: 7.00 mm x 7.30 mm
️· Chip Area: 51.10 mm<sup>2</sup>
️· Anode Pad: (Refer to Chip Drawing within the datasheet for details)
️· Wafer: 200 mm
️· Chips per Wafer: 518
️· Chip Thickness: 110 µm
4. Electrical Characteristics
️· Repetitive Peak Reverse Voltage (V<sub>RRM</sub>): 1200 V
️· Forward Current (I<sub>Fn</sub>): 100 A
️· Forward Voltage Drop (V<sub>F</sub>): 1.35 - 2.05 V (at 100A)
️· Reverse Leakage Current (I<sub>R</sub>): 18.0 µA (at V<sub>RRM</sub> = 1200V)
️· Breakdown Voltage (V<sub>BR</sub>): 1200 V (at I<sub>R</sub> = 0.25 mA)
️· *Note:* Continuous Forward Current is not specified (indicated as "-" in the table).
5. Handling and Storage
️· Electrostatic Discharge (ESD) Sensitivity: Device is ESD sensitive; proper precautions are necessary during handling.
️· Storage Conditions:
- Ambient Temperature: 17°C - 25°C (for sealed packages).
- Follow IEC 62258-3 for open packages.
️· Ni Layer Consumption: A note warns against consuming the Nickel layer during the production process.
6. Important Notes & Disclaimers
️· Not AEC-Q100/Q101 Qualified: The device has not been qualified to automotive standards.
️· Disclaimer: Standard Infineon disclaimers apply regarding warranties, suitability for applications, and potential risks.
️· Forward Current Limitation: Continuous Forward Current is not defined which is important to note.
️· Thermal considerations: Module designs should consider the thermal characteristics, as noted in a footnote.
1. Product Identification & Overview
️· Product: IDC51D120T8M
️· Type: Diode Chip
️· Technology: Emitter Controlled 4 Medium Power
️· Manufacturer: Infineon Technologies
️· Datasheet Revision: 2.1 (dated 09.04.2021)
2. Key Features & Applications
️· Features:
- 1200V Blocking Voltage (V<sub>RRM</sub>)
- 100A Forward Current (I<sub>Fn</sub>)
- 110µm Chip Thickness
- "Soft, fast switching" characteristic.
- Small temperature coefficient.
️· Recommended For: Low/Medium power modules
️· Applications: Low/medium power drives (likely power conversion, motor control, etc.)
3. Mechanical Specifications (Chip Dimensions)
️· Die Size: 7.00 mm x 7.30 mm
️· Chip Area: 51.10 mm<sup>2</sup>
️· Anode Pad: (Refer to Chip Drawing within the datasheet for details)
️· Wafer: 200 mm
️· Chips per Wafer: 518
️· Chip Thickness: 110 µm
4. Electrical Characteristics
️· Repetitive Peak Reverse Voltage (V<sub>RRM</sub>): 1200 V
️· Forward Current (I<sub>Fn</sub>): 100 A
️· Forward Voltage Drop (V<sub>F</sub>): 1.35 - 2.05 V (at 100A)
️· Reverse Leakage Current (I<sub>R</sub>): 18.0 µA (at V<sub>RRM</sub> = 1200V)
️· Breakdown Voltage (V<sub>BR</sub>): 1200 V (at I<sub>R</sub> = 0.25 mA)
️· *Note:* Continuous Forward Current is not specified (indicated as "-" in the table).
5. Handling and Storage
️· Electrostatic Discharge (ESD) Sensitivity: Device is ESD sensitive; proper precautions are necessary during handling.
️· Storage Conditions:
- Ambient Temperature: 17°C - 25°C (for sealed packages).
- Follow IEC 62258-3 for open packages.
️· Ni Layer Consumption: A note warns against consuming the Nickel layer during the production process.
6. Important Notes & Disclaimers
️· Not AEC-Q100/Q101 Qualified: The device has not been qualified to automotive standards.
️· Disclaimer: Standard Infineon disclaimers apply regarding warranties, suitability for applications, and potential risks.
️· Forward Current Limitation: Continuous Forward Current is not defined which is important to note.
️· Thermal considerations: Module designs should consider the thermal characteristics, as noted in a footnote.
| Part No. | IDC51D120T8M |
| Manufacturer | INFINEON |
| Size | 981 Kbytes |
| Pages | 8 pages |
| Description | Emitter Controlled 4 Medium Power Technology |
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