# isc N-Channel MOSFET Transistor STY60NK30Z

## Features
· Drain Current (ID): 60A @ TC=25℃
· Drain-Source Voltage (VDSS): 300V (Min)
· Static Drain-Source On-Resistance (RDS(on)): 0.045Ω (Max) @ VGS=10V

## Description
· Suitable for motor drive, DC-DC converters, power switches, and solenoid drive applications.

## Absolute Maximum Ratings
· Drain-Source Voltage (VDSS): 300 V
· Gate-Source Voltage (VGS): ±30 V
· Drain Current (ID): 60 A
· Drain Current - Single Pulse (IDM): 240 A
· Total Dissipation (PD) @ TC=25℃: 450 W
· Max. Operating Junction Temperature (TJ): 150 ℃
· Storage Temperature (Tstg): -55~150 ℃

## Thermal Characteristics

· Thermal Resistance, Junction to Case (Rthj-c): 0.28 ℃/W

## Electrical Characteristics
· Drain-Source Breakdown Voltage (V(BR)DSS): 300V @ VGS=0; ID=1.0mA
· Zero Gate Voltage Drain Current (IDSS): 1μA @ VDS=300V; VGS=0V
· Gate-Body Leakage Current (IGSS): ±10μA @ VGS= ±20V; VDS= 0V
· Gate Threshold Voltage (VGS(th)): 3.0-4.5 V @ VDS=VGS; ID=0.1mA
· Drain-Source On-Resistance (RDS(on)): 0.045Ω @ VGS=10V; ID=30A
· Forward On-Voltage (VSD): 1.6V @ IS=60A; VGS=0V

## Disclaimer
· Product specifications are subject to change without notice.
· Intended for general electronic equipment applications only.
· Not designed for specialized quality/reliability or hazardous/aerospace/medical fields.
· ISC disclaims all liability arising from product application.
· Reproduction of this datasheet is prohibited without permission.