# isc N-Channel MOSFET Transistor 2SK1327L

## Features

️· Drain Current - ID = 1A @ TC=25℃
️· Drain-Source Voltage - VDSS = 600V (Min)
️· Static Drain-Source On-Resistance - RDS(on) = 9Ω (Max) @ VGS=10V

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	600	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	1	A
IDM	Drain Current-Single Pulse	2	A
PD	Total Dissipation @TC=25℃	20	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	6.25	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 10mA	600	--	V
IDSS	Zero Gate Voltage Drain Current	VDS= 500V; VGS= 0 V	--	100	uA
IGSS	Gate-Body Leakage Current	VGS= ±16V;VDS= 0 V	--	±10	uA
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 1mA	2.0	4.0	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 0.5A	--	9.0	Ω
VSD	Forward On-Voltage	IS= 1A; VGS= 0 V	--	1.5	V

## Disclaimer

️· ISC reserves the right to make changes to the datasheet without notification.
️· Products are intended for general electronic equipment.
️· Not designed for specialized quality/reliability or hazardous environments.
️· No warranty or guarantee regarding suitability for any particular purpose.
️· Prohibited to reprint or copy without permission.