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Part No.	TIP3055
Manufacturer	STMICROELECTRONICS
Size	45 Kbytes
Pages	4 pages
Description	COMPLEMENTARY SILICON POWER TRANSISTORS

Datasheet Summary with AI

## Electrical Characteristics (Tcase = 25°C)

| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---------------------------|--------------------|------|------|------|------|
| Collector Cut-off Current (ICEX) | VCE = 100V | | | 5mA | mA |
| Collector Cut-off Current (ICEO) | VCE = 30V | | 0.7| | mA |
| Emitter Cut-off Current (IEBO) | VEB = 7V | | | 5 | mA |
| Sustaining Voltage (VCEO(sus)) | IC = 30mA | 60 | | | V |
| Saturation Voltage (VCE(sat)) | IC = 4A, IB = 0.4A | 1 | | | V |
| Base-Emitter Voltage (VBE) | IC = 4A, VCE = 4V | 1.8 | | | V |
| DC Current Gain (hFE) | IC = 4A, VCE = 4V | 20 | | 70 | |
| Transition Frequency (fT) | IC = 0.5A, VCE = 10V| | | 3| MHz|
| Turn-on Time (ton) | | | 0.5| | µs|
| Turn-off Time (toff) | | | 0.9| | µs|

## Package
TO-218 (SOT-93) – dimensions provided in datasheet.

Note: For PNP types, voltage and current values are negative.

# TIP2955/TIP3055 Complementary Silicon Power Transistors

## Description
Complementary NPN (TIP3055) and PNP (TIP2955) silicon epitaxial-base planar transistors intended for power switching circuits, series/shunt regulators, output stages, and hi-fi amplifiers.

## Absolute Maximum Ratings

Parameter PNP (TIP2955) NPN (TIP3055) Value Unit

Collector-Base Voltage (VCBO) 100 V

Collector-Emitter Voltage (VCEO) 60 V

Collector Current (IC) 15 A

Base Current (IB) 7 A

Total Dissipation (Ptot) 90 W

Storage Temperature (Tstg) -65 to 150 °C

Junction Temperature (Tj) 150 °C

## Thermal Characteristics
️· Thermal Resistance Junction-to-Case (Rthj-case): Max 1.4 °C/W

## Electrical Characteristics (Tcase = 25°C)

Parameter Test Conditions Min. Typ. Max. Unit

Collector Cut-off Current (ICEX) VCE = 100V 5mA mA

Collector Cut-off Current (ICEO) VCE = 30V 0.7 mA

Emitter Cut-off Current (IEBO) VEB = 7V 5 mA

Sustaining Voltage (VCEO(sus)) IC = 30mA 60 V

Saturation Voltage (VCE(sat)) IC = 4A, IB = 0.4A 1 V

Base-Emitter Voltage (VBE) IC = 4A, VCE = 4V 1.8 V

DC Current Gain (hFE) IC = 4A, VCE = 4V 20 70

Transition Frequency (fT) IC = 0.5A, VCE = 10V 3 MHz

Turn-on Time (ton) 0.5 µs

Turn-off Time (toff) 0.9 µs

## Package
TO-218 (SOT-93) – dimensions provided in datasheet.

Note: For PNP types, voltage and current values are negative.

Parameter	Value	Unit
Collector-Base Voltage (V<sub>CBO</sub>)	100	V
Collector-Emitter Voltage (V<sub>CEO</sub>)	60	V
Collector Current (I<sub>C</sub>)	15	A
Base Current (I<sub>B</sub>)	7	A
Total Dissipation (P<sub>tot</sub>)	90	W
Storage Temperature (T<sub>stg</sub>)	-65 to 150	°C
Junction Temperature (T<sub>j</sub>)	150	°C

Parameter	Test Conditions	Min.	Typ.	Max.	Unit
Collector Cut-off Current (I<sub>CEX</sub>)	V<sub>CE</sub> = 100V			5mA	mA
Collector Cut-off Current (I<sub>CEO</sub>)	V<sub>CE</sub> = 30V		0.7		mA
Emitter Cut-off Current (I<sub>EBO</sub>)	V<sub>EB</sub> = 7V			5	mA
Sustaining Voltage (V<sub>CEO(sus)</sub>)	I<sub>C</sub> = 30mA	60			V
Saturation Voltage (V<sub>CE(sat)</sub>)	I<sub>C</sub> = 4A, I<sub>B</sub> = 0.4A	1			V
Base-Emitter Voltage (V<sub>BE</sub>)	I<sub>C</sub> = 4A, V<sub>CE</sub> = 4V	1.8			V
DC Current Gain (h<sub>FE</sub>)	I<sub>C</sub> = 4A, V<sub>CE</sub> = 4V	20		70
Transition Frequency (f<sub>T</sub>)	I<sub>C</sub> = 0.5A, V<sub>CE</sub> = 10V			3	MHz
Turn-on Time (t<sub>on</sub>)			0.5		µs
Turn-off Time (t<sub>off</sub>)			0.9		µs