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Part No.	BD201
Manufacturer	ISC
Size	115 Kbytes
Pages	2 pages
Description	isc Silicon NPN Power Transistor

Datasheet Summary with AI

# INCHANGE Semiconductor: isc Silicon NPN Power Transistor BD201/203

## Description

· Collector-Emitter Breakdown Voltage: 45V (BD201), 60V (BD203)
· Complement to Type BD202/204

## Applications

· Hi-fi equipment output (15-15W into 4Ω or 8Ω load)

## Absolute Maximum Ratings (Ta=25°C)

· VCBO: 60V (BD201/203)
· VCEO: 45V (BD201), 60V (BD203)
· VEBO: 5V
· IC (Continuous): 8A
· ICM (Peak, tp≤10ms): 12A
· ICSM (Peak, tp≤2ms): 25A
· IB: 3A
· PC (@TC=25°C): 60W
· TJ: 150°C
· Tstg: -65~150°C

## Thermal Characteristics

· Rth j-c: 2.08 °C/W
· Rth j-a: 70 °C/W

## Electrical Characteristics (TC=25°C unless specified)

· V(BR)CEO: 45V (BD201), 60V (BD203)
· V(BR)CBO: 60V
· V(BR)EBO: 5V
· VCE(sat)-1: 1.0V (BD201), 1.5V (BD203)
· VBE(sat): 2.0V
· VBE(on): 1.5V
· ICEO: 0.2mA
· ICBO: 1.0mA
· IEBO: 0.5mA
· hFE (DC Current Gain): 30 (BD201), Value not specified for BD203
· fT (Current-Gain—Bandwidth Product): 7.0MHz (BD201)
· ton (Turn-On Time): 1 μs
· toff (Turn-Off Time): 4 μs

## Website

· www.iscsemi.cn