1. Device Overview

️· Type: NPN Power Transistors
️· Models: BD201, BD203
️· Complementary Pair: (Implied) BD201 is a complement to a PNP transistor (likely the BD202).
️· Package: TO-220

2. Electrical Characteristics (BD201 & BD203 - Key Values)

General:

️· VCEO (Collector-Emitter Voltage): Not explicitly stated, but implied to be around 40V (based on Is/b breakdown voltage)
️· IC (Collector Current): Maximum value not explicitly stated, but likely in the Amp range based on saturation current and breakdown current figures.
️· Power Dissipation: Not explicitly stated.

Specific Parameters:

Parameter	BD201 (Typical)	BD203 (Typical)	Unit	Notes/Conditions
ICBO (Collector Cutoff Current)	0.2	1	mA	Tj = 150°C, VCB = 40V
IEBO (Emitter Cutoff Current)	0.5	-	mA	VBE = 5.0 V, IC = 0
VBE (Base-Emitter Voltage)	1.5	-	V	IC = 3A, VCE = 2.0V
VCE(sat) (Collector-Emitter Saturation Voltage)	1	1.5	V	IC = 6A, IB = 0.6A
VBE(sat) (Base-Emitter Saturation Voltage)	-	2	V	IC = 6A, IB = 0.6A
f(hfe) (Cutoff Frequency)	25	-	kHz	VCE = 3.0 V
f(T) (Transition Frequency)	-	7	MHz	IC = 0.3 A, VCE = 3.0 V, f = 1 MHz
Is/b (Breakdown Current)	1.5	-	A	VCE = 40 V, tp = 0.1 s, Tamb = 25 °C
hFE1/hFE2 (Current Gain Ratio)	2.5	-	-	IC = 1 A, VCE = 2.0 V (matched complementary pairs)
t(on) (Turn-on Time)	1	-	µs	I(C) = 2A, I(B) = -I(B(off)) = 0.2A
t(off) (Turn-off Time)	-	4	µs	I(C) = 2A, I(B) = -I(B(off)) = 0.2A

Important Notes/Conditions:

️· Values listed are typically *representative* and may vary depending on manufacturing tolerances and operating conditions.
️· "Pulse conditions" (tp < 300 µs, δ = 2%) apply to the cutoff frequency and turn-off time measurements.



3. Mechanical Dimensions (TO-220 Package)

The text provides a table of dimensional values in millimeters and inches for the TO-220 package.

4. Disclaimer

️· The provided information is believed to be accurate but is not guaranteed.
️· Data is subject to change without notice.
️· The manufacturer (Comset Semiconductors) assumes no responsibility for consequences of usage.