1. Device Type:

️· N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)

2. Key Specifications (Absolute Maximum Ratings):

️· Drain-Source Voltage (VDS): 400 V
️· Continuous Drain Current (ID): 5.5 A
️· Pulsed Drain Current: 22 A
️· Gate-Source Voltage (VGS): ±30 V
️· Power Dissipation: (Not explicitly stated, but limited by junction temperature)
️· Operating Junction Temperature (TJ): (Not explicitly stated, but must be considered)
️· Storage Temperature: (Not explicitly stated)

3. Electrical Characteristics (Typical Values at 25°C unless otherwise noted):

️· Threshold Voltage (VGS(th)): (Not explicitly stated)
️· Zero Gate Voltage Drain Current (IDSS): 1 µA (VDS = 400V, VGS = 0V) , 10µA(VDS = 320V, TC = 125°C)
️· Gate-Body Leakage Current: 100nA forward, -100nA reverse
️· On-Resistance (RDS(on)): 0.8 - 1.0 Ω (VGS = 10 V, ID = 2.75 A)
️· Input Capacitance (Ciss): 680-885pF
️· Output Capacitance (Coss): 95-123pF
️· Reverse Transfer Capacitance (Crss): 16-21pF

4. Switching Characteristics: (Tested with Rg = 25Ω)

️· Turn-On Time (ton): 12 - 15 ns
️· Turn-On Rise Time (tr): 40 - 90 ns
️· Turn-Off Delay Time (td(off)): 60 - 130 ns
️· Turn-Off Fall Time (tf): 40 - 90 ns

5. Gate Charge Characteristics:

️· Total Gate Charge (Qg): 18 - 23 nC (VDS = 320 V, ID = 5.5 A, VGS = 10 V)
️· Gate-Source Charge (Qgs): 3.9 nC
️· Gate-Drain Charge (Qgd): 8.4 nC

6. Source-Drain Diode Characteristics:

️· Forward Voltage (VSD): 1.5 V (IS = 5.5 A, VGS = 0 V)
️· Reverse Recovery Time (trr): 265 ns (IS = 5.5 A, VGS = 0 V, diF/dt = 100 A/µs)
️· Reverse Recovery Charge (Qrr): 2.3 nC

7. Important Notes:

️· Repetitive Rating: Pulse width limited by maximum junction temperature.
️· Test Conditions: Many characteristics are specified with particular test conditions (e.g., VDS, VGS, ID, Rg).
️· Thermal Considerations: Proper heat sinking is crucial to keep the junction temperature within safe limits.
️· Switching Speed: The switching characteristics are sensitive to the gate resistance (Rg).