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Part No.	1N5620GP
Manufacturer	GULFSEMI
Size	184 Kbytes
Pages	2 pages
Description	SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE竊?00V CURRENT: 1.0A

Datasheet Summary with AI

1. Device Identification

️· Part Number: 1N5620GP
️· Type: SINTERED GLASS JUNCTION PLASTIC RECTIFIER
️· Voltage: 800V
️· Current: 1.0A
️· Package: DO-15 / DO-204AC

2. Key Features

️· Sintered Glass Junction: This is a key technology for improved reliability.
️· High-Temperature Construction: Metallurgically bonded for better performance at higher temperatures.
️· Environmental Compliance: Meets MIL-S-19500 standards.
️· High-Temperature Soldering: Guarantees solderability at elevated temperatures.

3. Mechanical Data & Construction

️· Leads: Plated axial leads, solderable per MIL-STD 202E, method 208C.
️· Case Material: UL-94 Class V-0 recognized Flame Retardant Epoxy.
️· Polarity: Indicated by a color band.
️· Mounting: Any orientation.

4. Absolute Maximum Ratings

Parameter Value Unit

VRRM (Peak Reverse Voltage) 800 V

VRMS (RMS Reverse Voltage) 560 V

VDC (DC Blocking Voltage) 800 V

VBR (Reverse Breakdown Voltage) 880 V

IFAV (Average Forward Current) 1.0 A

IFSM (Peak Surge Current) 50 A

VF (Forward Voltage @ 3.0A) 1.3 V

IR (Reverse Current) 1.0 / 25.0 µA

Trr (Reverse Recovery Time) 2.0 µS

Cj (Junction Capacitance) 50.0 pF

Rth(ja) (Thermal Resistance) 35.0 ℃/W

Tj (Junction Temperature) -65 to +175 ℃

5. Notes on Ratings

️· Reverse Recovery Conditions: Specific current values (0.5A, 1.0A, 0.25A) are relevant when considering the reverse recovery time.
️· Junction Capacitance Measurement: Measured at 1.0 MHz with a 12.0V reverse voltage.
️· Thermal Resistance: Measured from the junction to the ambient air when mounted on a printed circuit board.

Overall Impression

Parameter	Value	Unit
VRRM (Peak Reverse Voltage)	800	V
VRMS (RMS Reverse Voltage)	560	V
VDC (DC Blocking Voltage)	800	V
VBR (Reverse Breakdown Voltage)	880	V
IFAV (Average Forward Current)	1.0	A
IFSM (Peak Surge Current)	50	A
VF (Forward Voltage @ 3.0A)	1.3	V
IR (Reverse Current)	1.0 / 25.0	µA
Trr (Reverse Recovery Time)	2.0	µS
Cj (Junction Capacitance)	50.0	pF
Rth(ja) (Thermal Resistance)	35.0	℃/W
Tj (Junction Temperature)	-65 to +175	℃