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Hello, Please ask a question about 2SC3355 Datasheet
# Example questions:
➢ What package type is indicated by the 't92' designation in the ordering information?
➢ What is the maximum collector current (ic) that this transistor can handle?
➢ Within what operating temperature range is the performance of this device guaranteed to meet specifications?
# 2SC3355 NPN Silicon Epitaxial Transistor
## Features
· Low Noise and High Gain
· High Power Gain
## Ordering Information
· Package Type: TO-92
· Packing Options:
- Tape Box (-B)
- Bulk (-K)
- Tape Reel (-R)
· Lead Finish Options:
- Lead Free (-L)
- Halogen Free (-G)
- Standard (no suffix)
## Absolute Maximum Ratings (Ta=25°C)
· Collector-Base Voltage (V<sub>CBO</sub>): 20V
· Collector-Emitter Voltage (V<sub>CEO</sub>): 12V
· Emitter-Base Voltage (V<sub>EBO</sub>): 3V
· Collector Current (I<sub>C</sub>): 100mA
· Total Power Dissipation (P<sub>T</sub>): 600mW
· Junction Temperature (T<sub>J</sub>): 125°C
· Operating Temperature (T<sub>OPR</sub>): -20°C to +85°C
· Storage Temperature (T<sub>STG</sub>): -40°C to +150°C
## Electrical Characteristics (Ta=25°C)
· Collector Cutoff Current (I<sub>CBO</sub>): 1.0 µA (max)
· Emitter Cutoff Current (I<sub>EBO</sub>): 1.0 µA (max)
· DC Current Gain (h<sub>FE</sub>): 50 - 300 (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
· Gain bandwidth Product (f<sub>T</sub>): 7 GHz (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
· Feed-Back Capacitance (C<sub>re</sub>): 1.0 pF (V<sub>CB</sub>=10V, I<sub>E</sub>=0, f=1.0MHz)
· Noise Figure (NF): 1.1 dB (V<sub>CE</sub>=10V, I<sub>C</sub>=7mA, f=1.0GHz)
# 2SC3355 NPN Silicon Epitaxial Transistor
## Features
· Low Noise and High Gain
· High Power Gain
## Ordering Information
· Package Type: TO-92
· Packing Options:
- Tape Box (-B)
- Bulk (-K)
- Tape Reel (-R)
· Lead Finish Options:
- Lead Free (-L)
- Halogen Free (-G)
- Standard (no suffix)
## Absolute Maximum Ratings (Ta=25°C)
· Collector-Base Voltage (V<sub>CBO</sub>): 20V
· Collector-Emitter Voltage (V<sub>CEO</sub>): 12V
· Emitter-Base Voltage (V<sub>EBO</sub>): 3V
· Collector Current (I<sub>C</sub>): 100mA
· Total Power Dissipation (P<sub>T</sub>): 600mW
· Junction Temperature (T<sub>J</sub>): 125°C
· Operating Temperature (T<sub>OPR</sub>): -20°C to +85°C
· Storage Temperature (T<sub>STG</sub>): -40°C to +150°C
## Electrical Characteristics (Ta=25°C)
· Collector Cutoff Current (I<sub>CBO</sub>): 1.0 µA (max)
· Emitter Cutoff Current (I<sub>EBO</sub>): 1.0 µA (max)
· DC Current Gain (h<sub>FE</sub>): 50 - 300 (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
· Gain bandwidth Product (f<sub>T</sub>): 7 GHz (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
· Feed-Back Capacitance (C<sub>re</sub>): 1.0 pF (V<sub>CB</sub>=10V, I<sub>E</sub>=0, f=1.0MHz)
· Noise Figure (NF): 1.1 dB (V<sub>CE</sub>=10V, I<sub>C</sub>=7mA, f=1.0GHz)
| Part No. | 2SC3355 |
| Manufacturer | UTC |
| Size | 82 Kbytes |
| Pages | 2 pages |
| Description | HIGH FREQUENCY LOW NOISE AMPLIFIER |
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