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2SC3355 Datasheet with Chat AI
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  • Part No.2SC3355
    ManufacturerUTC
    Size82 Kbytes
    Pages2 pages
    DescriptionHIGH FREQUENCY LOW NOISE AMPLIFIER
    Datasheet Summary with AI

    # 2SC3355 NPN Silicon Epitaxial Transistor

    ## Features
    · Low Noise and High Gain
    · High Power Gain

    ## Ordering Information
    · Package Type: TO-92
    · Packing Options:
    - Tape Box (-B)
    - Bulk (-K)
    - Tape Reel (-R)
    · Lead Finish Options:
    - Lead Free (-L)
    - Halogen Free (-G)
    - Standard (no suffix)

    ## Absolute Maximum Ratings (Ta=25°C)
    · Collector-Base Voltage (V<sub>CBO</sub>): 20V
    · Collector-Emitter Voltage (V<sub>CEO</sub>): 12V

    · Emitter-Base Voltage (V<sub>EBO</sub>): 3V
    · Collector Current (I<sub>C</sub>): 100mA
    · Total Power Dissipation (P<sub>T</sub>): 600mW
    · Junction Temperature (T<sub>J</sub>): 125°C
    · Operating Temperature (T<sub>OPR</sub>): -20°C to +85°C
    · Storage Temperature (T<sub>STG</sub>): -40°C to +150°C

    ## Electrical Characteristics (Ta=25°C)
    · Collector Cutoff Current (I<sub>CBO</sub>): 1.0 µA (max)
    · Emitter Cutoff Current (I<sub>EBO</sub>): 1.0 µA (max)
    · DC Current Gain (h<sub>FE</sub>): 50 - 300 (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
    · Gain bandwidth Product (f<sub>T</sub>): 7 GHz (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
    · Feed-Back Capacitance (C<sub>re</sub>): 1.0 pF (V<sub>CB</sub>=10V, I<sub>E</sub>=0, f=1.0MHz)
    · Noise Figure (NF): 1.1 dB (V<sub>CE</sub>=10V, I<sub>C</sub>=7mA, f=1.0GHz)

    # 2SC3355 NPN Silicon Epitaxial Transistor

    ## Features
    · Low Noise and High Gain
    · High Power Gain

    ## Ordering Information
    · Package Type: TO-92
    · Packing Options:
    - Tape Box (-B)
    - Bulk (-K)
    - Tape Reel (-R)
    · Lead Finish Options:
    - Lead Free (-L)
    - Halogen Free (-G)
    - Standard (no suffix)

    ## Absolute Maximum Ratings (Ta=25°C)
    · Collector-Base Voltage (V<sub>CBO</sub>): 20V
    · Collector-Emitter Voltage (V<sub>CEO</sub>): 12V
    · Emitter-Base Voltage (V<sub>EBO</sub>): 3V
    · Collector Current (I<sub>C</sub>): 100mA
    · Total Power Dissipation (P<sub>T</sub>): 600mW
    · Junction Temperature (T<sub>J</sub>): 125°C
    · Operating Temperature (T<sub>OPR</sub>): -20°C to +85°C
    · Storage Temperature (T<sub>STG</sub>): -40°C to +150°C

    ## Electrical Characteristics (Ta=25°C)
    · Collector Cutoff Current (I<sub>CBO</sub>): 1.0 µA (max)
    · Emitter Cutoff Current (I<sub>EBO</sub>): 1.0 µA (max)
    · DC Current Gain (h<sub>FE</sub>): 50 - 300 (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
    · Gain bandwidth Product (f<sub>T</sub>): 7 GHz (V<sub>CE</sub>=10V, I<sub>C</sub>=20mA)
    · Feed-Back Capacitance (C<sub>re</sub>): 1.0 pF (V<sub>CB</sub>=10V, I<sub>E</sub>=0, f=1.0MHz)
    · Noise Figure (NF): 1.1 dB (V<sub>CE</sub>=10V, I<sub>C</sub>=7mA, f=1.0GHz)

    Part No.2SC3355
    ManufacturerUTC
    Size82 Kbytes
    Pages2 pages
    DescriptionHIGH FREQUENCY LOW NOISE AMPLIFIER
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