# 2SD1691 NPN SILICON TRANSISTOR

## FEATURES
️· High Power Dissipation
️· Complementary to 2SB1151
️· Low Collector Saturation Voltage
️· Large Current

## ORDERING INFORMATION
· Package Options: TO-126, TO-126C, TO-220, TO-220F1
· Lead Plating: Lead Free / Halogen Free
· Packing: Bulk / Tube
· Part Number Example: 2SD1691L-x-T60-K (TO-126, Bulk)

## ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
️· Collector-Base Voltage (VCBO): 60V
️· Collector-Emitter Voltage (VCEO): 60V
️· Emitter-Base Voltage (VEBO): 7V
️· Collector Current (IC): 5A (DC), 8A (Pulse)
️· Base Current (IB): 1A
️· Collector Power Dissipation (PC): 20W (TO-126/TO-126C), 23W (TO-220F1), 54W (TO-220)
️· Junction Temperature (TJ): 150°C
️· Storage Temperature Range (TSTG): -55°C to +150°C

## ELECTRICAL CHARACTERISTICS (Ta=25°C)
️· Collector Cut-off Current (ICBO): 10 μA
️· Emitter Cut-off Current (IEBO): 10 μA
️· DC Current Gain (hFE):
- hFE1 (Ic=0.1A, VCE=1V): 60
- hFE2 (Ic=2A, VCE=1V): 160-400
- hFE3 (Ic=5A, VCE=2V): 50
️· Collector-Emitter Saturation Voltage (VCE(SAT) - Ic=2A, IB=0.2A): 0.1-0.3V
️· Base-Emitter Saturation Voltage (VBE(SAT) - Ic=2A, IB=0.2A): 0.9-1.2V
️· Turn-On Time (TON): 0.2-1 μs
️· Storage Time (TSTG): 1.1-2.5 μs
️· Fall Time (TF): 0.2-1 μs

## hFE2 CLASSIFICATION
️· Rank O: 160-320
️· Rank Y: 200-400