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LS3550C_TO-71 Datasheet with Chat AI
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  • Part No.LS3550C_TO-71
    ManufacturerMICROSS
    Size285 Kbytes
    Pages1 page
    DescriptionLinear Systems Monolithic Dual PNP Transistor
    Datasheet Summary with AI

    LS3550C – Dual PNP Bipolar Transistor (Matched Pair)

    This datasheet describes a dual PNP bipolar transistor, designed as a matched pair for applications requiring excellent thermal tracking and tight VBE matching. It is hermetically sealed in a TO-71 package and also available as a bare die.

    Key Features:

    ️· Excellent Thermal Tracking: ≤ 15µV/°C
    ️· Tight VBE Matching: VBE1 - VBE2 ≤ 10mV
    ️· Matched Pair: Designed for consistent performance between the two transistors within the dual package.
    ️· Hermetically Sealed: Suitable for harsh environment applications.

    Absolute Maximum Ratings (at 25°C unless otherwise noted):

    ️· Storage Temperature: -65°C to +150°C
    ️· Operating Junction Temperature: -55°C to +150°C
    ️· Continuous Power Dissipation: TBD (To Be Determined)
    ️· Collector Current (Ic): 10mA
    ️· Collector-to-Collector Voltage (Vcc): 80V

    Electrical Characteristics:

    Parameter Symbol Min Typ Max Unit Conditions
    VBE1 - VBE2 VBE1 – VBE2 10 mV IC = -10mA, VCE = -5V
    Δ(VBE1–VBE2)/ΔT 15 µV/°C IC = -10mA, VCE = -5V, TA = -40°C to +85°C
    IB1-IB2 10 nA IC = -10µA, VCE = -5V
    Δ(IB1–IB2)/ΔT 1.0 nA/°C IC = -10µA, VCE = -5V, TA = -40°C to +85°C
    hFE1/hFE2 15 % IC = 10µA, VCE = 5V
    BVCBO -20 V IC = 10µA, IE = 0
    BVCEO -20 V IC = 10µA, IB = 0
    BVEBO -6.2 V IE = 10µA, IC = 0
    BVCCO -80 V IC = 10µA, IE = 0
    hFE 50 IC = -1mA, VCE = -5V
    hFE 40 IC = -10mA, VCE = -5V
    hFE 40 IC = -100mA, VCE = -5V
    VCE(sat) -1.2 V IC = -100mA, IB = -10mA
    IEBO -0.2 nA IE = 0, VCB = -3V
    ICBO -0.2 nA IE = 0, VCB = -20V
    COBO 2 pF IE = 0, VCB = -10V
    CC1C2 2 pF VCC = 0V
    IC1C2 -1 nA VCC = ±80V
    fT 600 MHz IC = -1mA, VCE = -5V
    NF 3 dB IC = -100µA, VCE = -5V, BW = 200Hz, RG = 10Ω, f = 1kHz

    Important Notes:

    ️· The reverse base-emitter voltage must not exceed 6.2V.
    ️· The reverse base-emitter current must not exceed 10µA.
    ️· Continuous power dissipation is to be determined.



    This summary captures the core information from the provided datasheet. Let me know if you have any more questions or want any specific aspects elaborated further!

    LS3550C – Dual PNP Bipolar Transistor (Matched Pair)

    This datasheet describes a dual PNP bipolar transistor, designed as a matched pair for applications requiring excellent thermal tracking and tight VBE matching. It is hermetically sealed in a TO-71 package and also available as a bare die.

    Key Features:

    ️· Excellent Thermal Tracking: ≤ 15µV/°C
    ️· Tight VBE Matching: VBE1 - VBE2 ≤ 10mV
    ️· Matched Pair: Designed for consistent performance between the two transistors within the dual package.
    ️· Hermetically Sealed: Suitable for harsh environment applications.

    Absolute Maximum Ratings (at 25°C unless otherwise noted):

    ️· Storage Temperature: -65°C to +150°C
    ️· Operating Junction Temperature: -55°C to +150°C
    ️· Continuous Power Dissipation: TBD (To Be Determined)
    ️· Collector Current (Ic): 10mA
    ️· Collector-to-Collector Voltage (Vcc): 80V

    Electrical Characteristics:

    Parameter Symbol Min Typ Max Unit Conditions
    VBE1 - VBE2 VBE1 – VBE2 10 mV IC = -10mA, VCE = -5V
    Δ(VBE1–VBE2)/ΔT 15 µV/°C IC = -10mA, VCE = -5V, TA = -40°C to +85°C
    IB1-IB2 10 nA IC = -10µA, VCE = -5V
    Δ(IB1–IB2)/ΔT 1.0 nA/°C IC = -10µA, VCE = -5V, TA = -40°C to +85°C
    hFE1/hFE2 15 % IC = 10µA, VCE = 5V
    BVCBO -20 V IC = 10µA, IE = 0
    BVCEO -20 V IC = 10µA, IB = 0
    BVEBO -6.2 V IE = 10µA, IC = 0
    BVCCO -80 V IC = 10µA, IE = 0
    hFE 50 IC = -1mA, VCE = -5V
    hFE 40 IC = -10mA, VCE = -5V
    hFE 40 IC = -100mA, VCE = -5V
    VCE(sat) -1.2 V IC = -100mA, IB = -10mA
    IEBO -0.2 nA IE = 0, VCB = -3V
    ICBO -0.2 nA IE = 0, VCB = -20V
    COBO 2 pF IE = 0, VCB = -10V
    CC1C2 2 pF VCC = 0V
    IC1C2 -1 nA VCC = ±80V
    fT 600 MHz IC = -1mA, VCE = -5V
    NF 3 dB IC = -100µA, VCE = -5V, BW = 200Hz, RG = 10Ω, f = 1kHz

    Important Notes:

    ️· The reverse base-emitter voltage must not exceed 6.2V.
    ️· The reverse base-emitter current must not exceed 10µA.
    ️· Continuous power dissipation is to be determined.



    This summary captures the core information from the provided datasheet. Let me know if you have any more questions or want any specific aspects elaborated further!

    Part No.LS3550C_TO-71
    ManufacturerMICROSS
    Size285 Kbytes
    Pages1 page
    DescriptionLinear Systems Monolithic Dual PNP Transistor
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