## SUMMARY:


1. Device Overview:

️· Device Type: PNP General Purpose Transistor
️· Manufacturer: Elektronische Bauelemente (implied)
️· Model Number: SS850

2. Key Electrical Characteristics (at Ta = 25°C):

Parameter	Min	Typ	Max	Unit	Test Conditions
BVCBO (Collector-Base Breakdown Voltage)	-40	-	-	V	Ic = 100µA, IE = 0
BVCEO (Collector-Emitter Breakdown Voltage)	-25	-	-	V	Ic = -0.1mA, IB = 0
BVEBO (Base-Emitter Breakdown Voltage)	-5	-	-	V	IE = -100µA, IC = 0
ICBO (Collector Cut-off Current)	-	-	-0.1	µA	VCB = -40V, IE = 0
ICEO (Collector Cut-off Current)	-	-	-0.1	µA	VCE = -20V, IB = 0
IEBO (Emitter Cut-off Current)	-	-	-0.1	µA	VEB = -5V, IC = 0
VCE(sat) (Collector-Emitter Saturation Voltage)	-	-	0.5	V	IC = -800mA, IB = -80mA
VBE(sat) (Base-Emitter Saturation Voltage)	-	-	1.2	V	IC = -800mA, IB = -80mA
hFE1 (DC Current Gain)	120	-	350	-	VCE = -1V, IC = -100mA
hFE2 (DC Current Gain)	40	-	-	-	VCE = -1V, IC = -800mA
fT (Transition Frequency)	100	-	-	MHz	VCE = -10V, IC = -50mA, f = 30 MHz
COB (Collector Output Capacitance)	-	-	20	pF	VCB = -10V, IE = 0, f = 1 MHz

3. hFE Classification:

Rank	Range	Marking
L	120 - 200	Y2
H	200 - 350	Y2
J	300 - 400	Y2

4. Package:

️· SOT-23 (Surface Mount Package)

5. Revision Date:

️· 01-June-2005, Revision B

6. Absolute Maximum Ratings:

These are not explicitly provided in the text, but would be part of a complete datasheet.

This summary provides a concise overview of the SS850 transistor, based on the available information. Note that a complete datasheet would contain additional details regarding absolute maximum ratings, thermal characteristics, and typical performance graphs.