# TIP110A PNP Silicon Transistor

## Description
· A PNP Darlington transistor for general purpose amplifier and switching applications.
· Low saturation voltage (VCE(SAT)).
· High current gain (hFE).

## Absolute Maximum Ratings (Ta=25°C)
· Collector to Base Voltage (VCBO): -45V
· Collector to Emitter Voltage (VCEO): -35V
· Emitter to Base Voltage (VEBO): -5V
· Collector Current (IC): -10A
· Power Dissipation (PD): 65W
· Junction Temperature (TJ): 150°C
· Storage Temperature (TSTG): -55°C to +150°C

## Electrical Characteristics (Ta=25°C)
· Collector-Base Breakdown Voltage (BVCBO): -45V (IC=-10mA, IE=0A)
· Collector-Emitter Breakdown Voltage (BVCEO): -35V (IC =-1mA, IB =0A)
· Emitter-Base Breakdown Voltage (BVEBO): -5V (IE=-10mA, IC=0A)

· Collector Cut-off Current (ICBO): -4 μA (VCB=-45V, IE =0A)
· Collector-Emitter Cut-Off Current (ICEO): -10 μA (VCE=-35V, IB=0A)
· Emitter Cut-off Current (IEBO): -2.0 mA (VBE=-5V, IC=0A)
· Collector-Emitter Saturation Voltage (VCE(SAT)): -2.0V (IC =-10A, IB =-0.1A)
· Base-Emitter On Voltage (VBE(ON)): -2.0V (VCE=-2.0V ,IC =-5mA)
· DC Current Gain (hFE1): 2000 - 60000 (VCE=-2.0V ,IC =-0.5A)
· DC Current Gain (hFE2): 1000 - 60000 (VCE=-2.0V ,IC =-10A)

## Ordering Information
· Package: TO-220
· Pin Assignment: 1: Base, 2: Collector, 3: Emitter
· Available Options:
- TIP110AL-TA3-T (Lead Free, Tube Pack)
- TIP110AG-TA3-T (Halogen Free, Tube Pack)