# NPN BU911 – High Voltage Power Darlington

## General Description

️· High voltage, silicon NPN transistor
️· Monolithic Darlington, TO-220 plastic package
️· Designed for electronic ignition, DC/AC motor controls, solenoid drivers
️· RoHS compliant

## Absolute Maximum Ratings

️· VCEO (Collector-Emitter Voltage): 400V
️· VCES (Collector-Emitter Voltage, Vbe=0): 450V
️· VEBO (Emitter-Base Voltage): 5V
️· IC (Collector Current): 6A
️· ICM (Collector Current Peak): 10A
️· IB (Base Current): 1A
️· PD (Total Device Dissipation): 60W @ TC = 25°C
️· TJ (Junction Temperature): 150°C
️· TStg (Storage Temperature Range): -65°C to +150°C

## Thermal Characteristics

️· RthJ-c (Thermal Resistance, Junction to case): 2.08 °C/W

## Electrical Characteristics (TC=25°C unless noted)

️· ICEO (Collector Cutoff Current): ≤ 1mA
️· ICES (Collector Cutoff Current): ≤ 1mA
️· IEBO (Emitter Cutoff Current): ≤ 5mA
️· VCEO (Collector-Emitter Sustaining Voltage): 400V
️· VF (Didode Forward Voltage): ≤ 2.5V
️· VCE(SAT) (Collector-Emitter Saturation Voltage): ≤ 1.8V (at specified IC and IB)
️· VBE(SAT) (Base-Emitter Saturation Voltage): ≤ 2.5V (at specified IC and IB)
️· Pulse conditions for VCE(SAT) and VBE(SAT): tp < 300 µs, duty cycle = 1.5%

## Mechanical Data – TO-220

️· Dimensions (mm): A (9.90-10.30), B (15.65-15.90), C (13.20-13.40), D (6.45-6.65), E (4.30-4.50), F (2.70-3.15), G (2.60-3.00), H (15.75-17.15), L (1.15-1.40), M (3.50-3.70), N (1.37), P (0.46-0.55), R (2.50-2.70), S (4.98-5.08), T (2.49-2.54), U (0.70-0.90)

## Pinout

️· Pin 1: Base
️· Pin 2: Collector
️· Pin 3: Emitter
️· Case: Collector