# FCX591 PNP Transistor

## Absolute Maximum Ratings

️· VCBO: -80 V (Collector-Base Voltage)
️· VCEO: -60 V (Collector-Emitter Voltage)
️· VEBO: -5 V (Emitter-Base Voltage)
️· ICM: -2 A (Peak Pulse Current)
️· IC: -1 A (Continuous Collector Current)
️· IB: -200 mA (Base Current)
️· Ptot: 1 W (Power Dissipation)
️· Tj:Tstg: -65 to +150 °C (Operating and Storage Temperature Range)

## Electrical Characteristics (Tamb = 25°C)

️· V(BR)CBO: -80 V (Breakdown Voltage, Collector-Base)
️· V(BR)CEO: -60 V (Breakdown Voltage, Collector-Emitter)
️· V(BR)EBO: -5 V (Breakdown Voltage, Emitter-Base)
️· ICBO: ≤ -100 nA (Collector Cut-Off Current)
️· ICES: ≤ -100 nA (Collector-Emitter Cut-Off Current)

️· IEBO: ≤ -100 nA (Emitter Cut-Off Current)
️· VCE(sat): 0.3 - 0.6 V (Saturation Voltage)
- I C=-500mA, IB=-50mA
- I C=-1A, IB=-100mA
️· VBE(sat): ≤ -1.2 V (Base-Emitter Saturation Voltage)
️· VBE(on): ≤ -1.0 V (Base-Emitter Turn-on Voltage)
️· hFE: 100 - 300 (Static Forward Current Transfer Ratio)
- I C=-1mA, VCE=-5V
- I C=-500mA, VCE=-5V
- I C=-1A, VCE=-5V
️· fT: 150 MHz (Transition Frequency)
️· Cobo: 10 pF (Output Capacitance)

## Notes

️· Pulsed conditions are used for * measurements. Pulse width=300µs. Duty cycle ≤ 2%.
️· Typical Characteristics graphs are available in the FMMT591 datasheet.
️· Complementary type: FCX491