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2N5000 Datasheet with Chat AI
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    Hello, Please ask a question about 2N5000 Datasheet

  • # Example questions: ➢ Compare and contrast the thermal resistance (junction-to-case) values for the 2n40m and 2n6000 transistors. what does a lower thermal resistance value indicate?
    ➢ The datasheet lists several test conditions for determining certain parameters. explain why controlling test conditions (like temperature and voltage) is important when characterizing a transistor.
    ➢ What is the maximum collector-emitter voltage (vceo) for the 2n5141 transistor?

  • Part No.2N5000
    ManufacturerNJSEMI
    Size108 Kbytes
    Pages2 pages
    DescriptionN-P-N SILICON POWER TRANSISTORS
    Datasheet Summary with AI

    1. General Information:

    ️· Type: NPN Silicon Power Transistors
    ️· Manufacturers: NJ Semiconductors (or a similar supplier)
    ️· Data Sheet Revision/Date: Not explicitly stated, but "NJ Semiconductors reserves the right to change..." indicates ongoing revisions.
    ️· Quality Assurance: NJ Semiconductors has quality control measures.

    2. Absolute Maximum Ratings (Not Fully Listed, but Referenced):

    ️· Collector-Emitter Voltage (VCEO): Referenced in several test conditions, values implied to be around 80V-175V depending on the specific transistor.
    ️· Operating Junction Temperature Range: -65°C to 200°C
    ️· Storage Temperature Range: -65°C to 200°C
    ️· Lead/Terminal Temperature (short duration): 300°C

    3. Electrical Characteristics (at 25°C unless otherwise noted):

    *This section provides a table of parameters. Here's a description, it's impossible to give exact numbers without the complete table*:

    ️· Collector Cutoff Current (ICEO): A low value, indicating the transistor's ability to block current.
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): A measure of the transistor's "on" resistance.
    ️· Emitter Cutoff Current (IE): A measure of leakage current.
    ️· Forward Beta (hFE): Current gain (related to the amplification factor).
    ️· Forward Current Transfer Ratio (hep): Similar to hFE.
    ️· Base-Emitter Voltage (VBE): Voltage between the base and emitter.
    ️· Output Capacitance: A measure of the capacitor like effect.
    ️· Small Signal Characteristics (hfe/hfe): Details of small signal behavior.

    4. Test Conditions/Parameters:

    *The datasheet specifies various test conditions for measuring electrical characteristics, for example:*
    ️· Ic = 100mA, If = 0
    ️· VCE = 40V, IB = 0
    ️· VCE = 60V, VBE = 0
    ️· VCE = 60V, TC = 150°C
    ️· VBE = 5V, IE = 0
    ️· Vf = 6V, IC = 0
    ️· VCE = 5V, IC = various values (A, 2A, 3A)
    ️· VCE = 5V, IC = .1A, t = .01ms
    ️· VCE = 5V, IC = .5A, f = 20MHz
    ️· VCB = 10V, IE = 0, f = 1 MHz

    5. Thermal Characteristics:

    ️· Junction-to-Case Thermal Resistance (Rjc): Values around 5°C/W to 87.5°C/W.
    ️· Junction-to-Ambient Thermal Resistance (Rja): Values around .7mW/°C and 5.7mW/°C, indicating how well the heat dissipates to the surrounding air.

    6. Switching Characteristics:

    ️· Turn-on Time (ton): 0.1 microseconds
    ️· Turn-off Time (toff): 1.1 microseconds

    7. Notes and Disclaimers:

    ️· Datasheet information is subject to change.
    ️· Customers should verify datasheet currency before ordering.
    ️· References to JEDEC standards.
    ️· Short duration lead temperature limits.



    To give you more specific information, I would need the complete table of electrical characteristics. Do you have that data available?

    1. General Information:

    ️· Type: NPN Silicon Power Transistors
    ️· Manufacturers: NJ Semiconductors (or a similar supplier)
    ️· Data Sheet Revision/Date: Not explicitly stated, but "NJ Semiconductors reserves the right to change..." indicates ongoing revisions.
    ️· Quality Assurance: NJ Semiconductors has quality control measures.

    2. Absolute Maximum Ratings (Not Fully Listed, but Referenced):

    ️· Collector-Emitter Voltage (VCEO): Referenced in several test conditions, values implied to be around 80V-175V depending on the specific transistor.
    ️· Operating Junction Temperature Range: -65°C to 200°C
    ️· Storage Temperature Range: -65°C to 200°C
    ️· Lead/Terminal Temperature (short duration): 300°C

    3. Electrical Characteristics (at 25°C unless otherwise noted):

    *This section provides a table of parameters. Here's a description, it's impossible to give exact numbers without the complete table*:

    ️· Collector Cutoff Current (ICEO): A low value, indicating the transistor's ability to block current.
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): A measure of the transistor's "on" resistance.
    ️· Emitter Cutoff Current (IE): A measure of leakage current.
    ️· Forward Beta (hFE): Current gain (related to the amplification factor).
    ️· Forward Current Transfer Ratio (hep): Similar to hFE.
    ️· Base-Emitter Voltage (VBE): Voltage between the base and emitter.
    ️· Output Capacitance: A measure of the capacitor like effect.
    ️· Small Signal Characteristics (hfe/hfe): Details of small signal behavior.

    4. Test Conditions/Parameters:

    *The datasheet specifies various test conditions for measuring electrical characteristics, for example:*
    ️· Ic = 100mA, If = 0
    ️· VCE = 40V, IB = 0
    ️· VCE = 60V, VBE = 0
    ️· VCE = 60V, TC = 150°C
    ️· VBE = 5V, IE = 0
    ️· Vf = 6V, IC = 0
    ️· VCE = 5V, IC = various values (A, 2A, 3A)
    ️· VCE = 5V, IC = .1A, t = .01ms
    ️· VCE = 5V, IC = .5A, f = 20MHz
    ️· VCB = 10V, IE = 0, f = 1 MHz

    5. Thermal Characteristics:

    ️· Junction-to-Case Thermal Resistance (Rjc): Values around 5°C/W to 87.5°C/W.
    ️· Junction-to-Ambient Thermal Resistance (Rja): Values around .7mW/°C and 5.7mW/°C, indicating how well the heat dissipates to the surrounding air.

    6. Switching Characteristics:

    ️· Turn-on Time (ton): 0.1 microseconds
    ️· Turn-off Time (toff): 1.1 microseconds

    7. Notes and Disclaimers:

    ️· Datasheet information is subject to change.
    ️· Customers should verify datasheet currency before ordering.
    ️· References to JEDEC standards.
    ️· Short duration lead temperature limits.



    To give you more specific information, I would need the complete table of electrical characteristics. Do you have that data available?

    Part No.2N5000
    ManufacturerNJSEMI
    Size108 Kbytes
    Pages2 pages
    DescriptionN-P-N SILICON POWER TRANSISTORS
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