# NPN2N3108-2N3110 General Purpose Amplifiers and Switches

## Product Description

️· NPN transistors
️· Mounted in TO-39 metal package
️· Intended for large signal, low noise industrial applications

## Absolute Maximum Ratings

️· 2N3108:
- VCEO (Collector-Emitter Voltage): 60 V
- VCBO (Collector-Base Voltage): 100 V
- VEBO (Emitter-Base Voltage): 2 V
- IC (Collector Current): 5 A
- PD (Total Power Dissipation): 1 W
- Tj (Junction Temperature): 150 °C
- Tsta (Storage Temperature Range): -65 to +150 °C
️· 2N3110:
- VCEO: 40 V
- VCBO: 80 V
- VEBO: 0.8 V
- IC: 5 A
- PD: 1 W
- Tj: 150 °C
- Tsta: -65 to +150 °C

## Thermal Characteristics

️· RthJ-a (Thermal Resistance, Junction to ambient): 219 °C/W (2N3108)
️· RthJ-c (Thermal Resistance, Junction to case): 35 °C/W

## Electrical Characteristics (Tj = 25°C unless otherwise specified)

️· ICBO (Collector Cutoff Current): 100 nA (2N3108), 80 nA (2N3110)
️· ICES (Collector Cutoff Current, Emitter open): 1 nA
️· IEBO (Emitter Cutoff Current, Collector open): 1 nA
️· VCBO (Collector-Base Breakdown Voltage): 60 V
️· VCEO (Collector-Emitter Breakdown Voltage): 40 V (2N3110), 60 V (2N3108)
️· VEBO (Emitter-Base Breakdown Voltage): 2 V
️· VCE(SAT) (Collector-Emitter Saturation Voltage): 1 V (2N3108), 0.8 V (2N3110)
️· VBE(SAT) (Base-Emitter Saturation Voltage): 0.7 V
️· hFE (DC Current Gain): 7 (2N3108), 40 (2N3110)
️· fr (Transition frequency): 20 MHz
️· CEBO (Emitter-Base Capacitance): 120pF (2N3108), 80 pF (2N3110)
️· CCBO (Collector-Base Capacitance): 20 pF

## Switching Times

️· ton (Turn-on time): 200 ns
️· toff (Turn-off time): 600 ns

## Mechanical Data (Case TO-39)

️· Dimensions (mm): See datasheet for detailed dimensions (A, B, C, D, E, F, G, H, J, K, L)
️· Pin 1: Emitter
️· Pin 2: Base
️· Pin 3: Collector