2N4445 / New Jersey Semi-Conductor Products, Inc.

2N4445 Datasheet with Chat AI

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Part No.	2N4445
Manufacturer	NJSEMI
Size	69 Kbytes
Pages	1 page
Description	N-Channel Field Effect Transistors

Datasheet Summary with AI

️· Gate Leakage Current (loss): 7.0 - 10 nA (at 100°C)
️· Drain Cutoff Current (ID OFF): 10 - 12 nA
️· Pinch-Off Voltage (VPO): 6V
️· On Resistance (Ros): 3.0 - 5.0 Ohms
️· Drain-Source "On" Voltage (Vos (On)): 4.0 - 7.0 mV
️· Drain Current (IDs): Varies by model
️· Gate to Source Capacitance (Cos): 18 - 35 pfd
️· Gate to Drain Capacitance (Coo): 35 - 50 pfd
️· Turn-On Time (Td+Tr): 18 - 25 ns
️· Turn-Off Time (Ts+Tf): 35 - 50 ns

## Models
️· 2N4445: Specific parameters listed above
️· 2N4446: Specific parameters listed above
️· 2N4447: Specific parameters listed above
️· 2N4448: Specific parameters listed above

# 2N4445 - 2N4448 Silicon N-Channel FETs

## General Description
️· Silicon epitaxial junction N-channel field-effect transistors
️· Low RDS (typical 4 Ohms)
️· Low COD (typical 15 pfd)
️· High drain current (typical 400mA)

## Absolute Maximum Ratings
️· Drain to Gate Voltage (BVoao): 25V to 26V (varies by model)
️· Gate to Source Voltage (BVaso): -25V to -20V (varies by model)
️· Peak Forward Gate Current (lap): 100mA
️· Peak Drain Current (ID): 400mA
️· Power Dissipation (Po): 400mW
️· Derating Factor (DP): 2.3 mW/°C
️· Junction Temperature (TJ): 240°C
️· Storage Temperature: -65°C to +200°C

## Electrical Characteristics (TA = 25°C)
️· Gate Leakage Current (lass): 2.0 - 3.0 nA
️· Gate Leakage Current (loss): 7.0 - 10 nA (at 100°C)
️· Drain Cutoff Current (ID OFF): 10 - 12 nA
️· Pinch-Off Voltage (VPO): 6V
️· On Resistance (Ros): 3.0 - 5.0 Ohms
️· Drain-Source "On" Voltage (Vos (On)): 4.0 - 7.0 mV
️· Drain Current (IDs): Varies by model
️· Gate to Source Capacitance (Cos): 18 - 35 pfd
️· Gate to Drain Capacitance (Coo): 35 - 50 pfd
️· Turn-On Time (Td+Tr): 18 - 25 ns
️· Turn-Off Time (Ts+Tf): 35 - 50 ns

## Models
️· 2N4445: Specific parameters listed above
️· 2N4446: Specific parameters listed above
️· 2N4447: Specific parameters listed above
️· 2N4448: Specific parameters listed above