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Hello, Please ask a question about IRCZ44 Datasheet
# Example questions:
➢ What is the typical forward voltage (vsd) of the source-drain diode at a junction temperature (tj) of 25°c and a continuous source current (is) of 52a?
➢ What is the typical value of the gate-to-source charge (qgs) at an id of 52a, vds of 48v, and vgs of 10v?
➢ What is the maximum allowable pulse width for repetitive rating, and what limits it?
| Part No. | IRCZ44 |
| Manufacturer | IRF |
| Size | 132 Kbytes |
| Pages | 6 pages |
| Description | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A) |
1. General Description & Key Features:
️· The IRCZ44 is a power MOSFET.
️· It's designed for applications requiring high current and fast switching.
️· It includes features for current sensing.
2. Electrical Characteristics - Highlights:
️· V(BR)DSS (Drain-Source Breakdown Voltage): Not explicitly stated, but implied to be a significant value.
️· R(DS)(on) (Drain-Source On-Resistance): Normalized On-Resistance vs. Temperature is provided in a graph.
️· I(D) (Drain Current): Can handle up to 52A continuous.
️· I(S) (Source Current - Body Diode): Can handle up to 50A.
️· V(SD) (Source-Drain Voltage - Body Diode): ~2.5V at 25°C.
️· Qg (Total Gate Charge): 95nC (at specific conditions).
️· HEXSense Ratio: Ranges from 2460 to 2720 (at specified conditions, like Vgs=10V and Id=52A). This relates to the current sensing capability.
️· Switching Times: Turn-on/off times and rise/fall times are quantified, providing insights into switching performance (e.g., td(on) = 19ns, tf = 86ns).
️· Capacitance: Ciss (Input Capacitance) is 2500pF, crucial for high-frequency operation.
️· Thermal Characteristics: Includes "Maximum Drain Current vs. Case Temperature" data and "Maximum Safe Operating Area" plot.
3. Key Figures & Diagrams (Briefly Described):
️· Fig. 1 & 2: Output Characteristics (at different temperatures)
️· Fig. 3: Transfer Characteristics
️· Fig. 4: Normalized On-Resistance vs. Temperature
️· Fig. 5 & 6: Capacitance vs. Drain Voltage & Gate Charge vs. Source Voltage
️· Fig. 7: Source-Drain Diode Forward Voltage
️· Fig. 8: Maximum Safe Operating Area
️· Fig. 11: Transient Thermal Impedance
️· Fig. 15-17: HEXSense Ratio vs. Junction Temperature/Gate-Source Voltage
️· Fig. 18 & 19: Test Circuit diagrams for HEXSense functionality.
4. Important Notes/Conditions:
️· Repetitive ratings are pulse-width limited by maximum junction temperature.
️· Specific test conditions are defined for many parameters (e.g., voltage levels, temperatures, resistance values).
Where to find more information:
️· Appendix A: Mechanical Drawings
️· Appendix B: Part Marking Information
️· Appendix C: Test Circuit Diagrams
1. General Description & Key Features:
️· The IRCZ44 is a power MOSFET.
️· It's designed for applications requiring high current and fast switching.
️· It includes features for current sensing.
2. Electrical Characteristics - Highlights:
️· V(BR)DSS (Drain-Source Breakdown Voltage): Not explicitly stated, but implied to be a significant value.
️· R(DS)(on) (Drain-Source On-Resistance): Normalized On-Resistance vs. Temperature is provided in a graph.
️· I(D) (Drain Current): Can handle up to 52A continuous.
️· I(S) (Source Current - Body Diode): Can handle up to 50A.
️· V(SD) (Source-Drain Voltage - Body Diode): ~2.5V at 25°C.
️· Qg (Total Gate Charge): 95nC (at specific conditions).
️· HEXSense Ratio: Ranges from 2460 to 2720 (at specified conditions, like Vgs=10V and Id=52A). This relates to the current sensing capability.
️· Switching Times: Turn-on/off times and rise/fall times are quantified, providing insights into switching performance (e.g., td(on) = 19ns, tf = 86ns).
️· Capacitance: Ciss (Input Capacitance) is 2500pF, crucial for high-frequency operation.
️· Thermal Characteristics: Includes "Maximum Drain Current vs. Case Temperature" data and "Maximum Safe Operating Area" plot.
3. Key Figures & Diagrams (Briefly Described):
️· Fig. 1 & 2: Output Characteristics (at different temperatures)
️· Fig. 3: Transfer Characteristics
️· Fig. 4: Normalized On-Resistance vs. Temperature
️· Fig. 5 & 6: Capacitance vs. Drain Voltage & Gate Charge vs. Source Voltage
️· Fig. 7: Source-Drain Diode Forward Voltage
️· Fig. 8: Maximum Safe Operating Area
️· Fig. 11: Transient Thermal Impedance
️· Fig. 15-17: HEXSense Ratio vs. Junction Temperature/Gate-Source Voltage
️· Fig. 18 & 19: Test Circuit diagrams for HEXSense functionality.
4. Important Notes/Conditions:
️· Repetitive ratings are pulse-width limited by maximum junction temperature.
️· Specific test conditions are defined for many parameters (e.g., voltage levels, temperatures, resistance values).
Where to find more information:
️· Appendix A: Mechanical Drawings
️· Appendix B: Part Marking Information
️· Appendix C: Test Circuit Diagrams
| Part No. | IRCZ44 |
| Manufacturer | IRF |
| Size | 132 Kbytes |
| Pages | 6 pages |
| Description | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A) |
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