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Hello, Please ask a question about GS2AAF Datasheet
# Example questions:
➢ Considering the typical junction capacitance (cj) of the gs2aaf diode, what reverse voltage was applied during its measurement, and at what frequency?
➢ What is the vrrm for the gs2baf diode, and what would happen if this value were exceeded?
➢ What is the maximum average forward rectified current (i(av)) for the gs2kaf diode, and under what operating condition is this current specified?
| Part No. | GS2AAF |
| Manufacturer | SUNMATE |
| Size | 1Mb |
| Pages | 2 pages |
| Description | SURFACE MOUNT SILICON RECTIFIER DIODES |
# GS2AAF - GS2MAF Schottky Barrier Diode Datasheet Summary
Device Type: Schottky Barrier Diode
Key Parameters:
️· Voltage: Available in 50V, 100V, 200V, 400V, 600V, 800V, and 1000V reverse voltage ratings (V<sub>RRM</sub>).
️· Current: 2.0A average forward rectified current (I<sub>AV</sub>) @ 110°C case temperature.
️· Surge Current: 60A peak forward surge current (I<sub>FSM</sub>).
️· Forward Voltage: 1.1V typical at 2.0A.
️· Reverse Leakage: 5.0µA @ 25°C, 50µA @ 100°C (IR).
️· Capacitance: 30pF typical junction capacitance (CJ).
️· Thermal Resistance: 50°C/W junction-to-ambient (RθJA).
️· Operating/Storage Temperature: -65°C to +175°C.
Package: Not explicitly stated in the provided text, but implied to be a standard package for Schottky diodes.
Applications: Suitable for low voltage, high frequency switching, rectification, and protection circuits.
Key Features:
️· Low forward voltage drop.
️· High surge current capability.
️· Guard ring for stress relief.
️· Low stored charge.
Datasheet Notes:
️· All measurements are performed under specific conditions.
️· Derating is recommended for capacitive loads.
️· Thermal resistance values are subject to PCB layout and heat sinking.
# GS2AAF - GS2MAF Schottky Barrier Diode Datasheet Summary
Device Type: Schottky Barrier Diode
Key Parameters:
️· Voltage: Available in 50V, 100V, 200V, 400V, 600V, 800V, and 1000V reverse voltage ratings (V<sub>RRM</sub>).
️· Current: 2.0A average forward rectified current (I<sub>AV</sub>) @ 110°C case temperature.
️· Surge Current: 60A peak forward surge current (I<sub>FSM</sub>).
️· Forward Voltage: 1.1V typical at 2.0A.
️· Reverse Leakage: 5.0µA @ 25°C, 50µA @ 100°C (IR).
️· Capacitance: 30pF typical junction capacitance (CJ).
️· Thermal Resistance: 50°C/W junction-to-ambient (RθJA).
️· Operating/Storage Temperature: -65°C to +175°C.
Package: Not explicitly stated in the provided text, but implied to be a standard package for Schottky diodes.
Applications: Suitable for low voltage, high frequency switching, rectification, and protection circuits.
Key Features:
️· Low forward voltage drop.
️· High surge current capability.
️· Guard ring for stress relief.
️· Low stored charge.
Datasheet Notes:
️· All measurements are performed under specific conditions.
️· Derating is recommended for capacitive loads.
️· Thermal resistance values are subject to PCB layout and heat sinking.
| Part No. | GS2AAF |
| Manufacturer | SUNMATE |
| Size | 1Mb |
| Pages | 2 pages |
| Description | SURFACE MOUNT SILICON RECTIFIER DIODES |
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