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2N6449 Datasheet with Chat AI

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Part No.	2N6449
Manufacturer	INTERFET
Size	91 Kbytes
Pages	1 page
Description	N-Channel Silicon Junction Field-Effect Transistor

Datasheet Summary with AI

· Gate Source Breakdown Voltage (V(BR)GSS): 2N6449 - 300V, 2N6450 - 200V
· Gate Reverse Current (IGSS): Ranges specified, see datasheet table.
· Gate Source Cutoff Voltage (VGS(OFF)): 2N6449 -2 to -15V, 2N6450 -2 to -15V
· Drain Saturation Current (Pulsed) (IDSS): 2N6449 - 2 to 10mA, 2N6450 - 2 to 10mA

Dynamic

· Common Source Forward Transfer Admittance (Yfs): 0.5 to 3 mS
· Common Source Output Conductance (Yos): 100 µS
· Common Source Input Capacitance (Ciss): 20 pF
· Common Source Reverse Transfer Capacitance (Crss): 2.5 pF

## Pin Configuration

· 1: Source
· 2: Drain
· 3: Gate & Case

# 2N6449, 2N6450 - N-Channel Silicon Junction Field-Effect Transistor

## Features

· N-Channel Junction FET
· TOÐ39 Package
· NJ42 Process

## Absolute Maximum Ratings (TA = 25°C)

· Reverse Gate Source Voltage: 2N6449 - 300V, 2N6450 - 200V
· Reverse Gate Drain Voltage: 2N6449 - 300V, 2N6450 - 200V
· Continuous Forward Gate Current: 10 mA
· Continuous Device Power Dissipation: 800 mW
· Power Derating: 6.4 mW/°C

## Electrical Characteristics

Static

· Gate Source Breakdown Voltage (V(BR)GSS): 2N6449 - 300V, 2N6450 - 200V
· Gate Reverse Current (IGSS): Ranges specified, see datasheet table.
· Gate Source Cutoff Voltage (VGS(OFF)): 2N6449 -2 to -15V, 2N6450 -2 to -15V
· Drain Saturation Current (Pulsed) (IDSS): 2N6449 - 2 to 10mA, 2N6450 - 2 to 10mA

Dynamic

· Common Source Forward Transfer Admittance (Yfs): 0.5 to 3 mS
· Common Source Output Conductance (Yos): 100 µS
· Common Source Input Capacitance (Ciss): 20 pF
· Common Source Reverse Transfer Capacitance (Crss): 2.5 pF

## Pin Configuration

· 1: Source
· 2: Drain
· 3: Gate & Case