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Hello, Please ask a question about AS8SLC128K32 Datasheet
# Example questions:
➢ What is the difference between twp1 and twp2, according to the provided text?
➢ What is the maximum read cycle time (trc) for the as8slc128k32 at -10 degrees celsius?
➢ What is the minimum data setup time (tds) required for a write operation?
1. General Information & Title Block:
️· Product: AS8SLC128K32 SRAM
️· Manufacturer: Micross Components
️· Revision: 0.8 (dated 01/10 – likely means January 2010)
️· Disclaimer: Micross Components reserves the right to change product specifications without notice. This is standard on datasheets.
2. Electrical Characteristics - Operating Current (mA):
️· Provides figures for several current consumption scenarios:
- Read Cycle: High Speed & Low Speed Operating Currents
- Write Cycle: High Speed & Low Speed Operating Currents
- Standby: Power Supply Current (using CMOS standby)
️· The figures are given for various temperature ranges (e.g., -10°C to 125°C).
️· Notes (2, 3, 13) likely provide context for these figures (e.g., voltage conditions, frequency, etc.).
3. Capacitance (pF):
️· Lists several capacitance values related to the device's internal circuitry:
- A0-A16 Capacitance (input pins)
- OE (Output Enable) Capacitance
- WE/CS Capacitance
- I/O Capacitance
️· Important Note: Capacitance is sampled, meaning it’s not continuously tested.
4. AC Test Conditions:
️· Sets parameters for AC timing measurements:
- Input Pulse Levels
- Input Rise/Fall Times
- Timing Reference Levels
- Output Load (specifies the impedance and capacitance connected to the output)
5. AC Electrical Characteristics – Timing (ns):
️· This is the most complex section, outlining the timing parameters for read and write cycles. It presents a table of values for:
- Read Cycle: Read Cycle Time, Address Access Time, Chip Select Access Time, Output Hold Time, Chip Select to Output Low-Z, Chip Select to Output High-Z, Output Enable Access Time, Output Enable to Output Low-Z, and Output Disable to Output High-Z.
- Write Cycle: Write Cycle Time, Chip Select to End of Write, Address Valid to End of Write, Address Setup Time, Address Hold Time, Write Pulse Width (controlled by different signals), Data Setup Time, Data Hold Time, Write Enable to Output Low-Z, Write Enable to Output High-Z.
️· Again, these values are given for different temperature ranges.
Key Observations & Likely Target Audience:
️· Target Audience: This datasheet excerpt is intended for electrical engineers and technicians responsible for designing circuits that use the AS8SLC128K32 SRAM. They need the detailed timing information to ensure proper operation.
️· Type of SRAM: The part is a synchronous SRAM, as evidenced by the timing parameters and the references to signals like WE\ (Write Enable) and OE\ (Output Enable).
️· Legacy Part: The "Rev. 0.8 01/10" suggests this is a relatively older part, which is common with Micross Components, as they often support legacy devices.
1. General Information & Title Block:
️· Product: AS8SLC128K32 SRAM
️· Manufacturer: Micross Components
️· Revision: 0.8 (dated 01/10 – likely means January 2010)
️· Disclaimer: Micross Components reserves the right to change product specifications without notice. This is standard on datasheets.
2. Electrical Characteristics - Operating Current (mA):
️· Provides figures for several current consumption scenarios:
- Read Cycle: High Speed & Low Speed Operating Currents
- Write Cycle: High Speed & Low Speed Operating Currents
- Standby: Power Supply Current (using CMOS standby)
️· The figures are given for various temperature ranges (e.g., -10°C to 125°C).
️· Notes (2, 3, 13) likely provide context for these figures (e.g., voltage conditions, frequency, etc.).
3. Capacitance (pF):
️· Lists several capacitance values related to the device's internal circuitry:
- A0-A16 Capacitance (input pins)
- OE (Output Enable) Capacitance
- WE/CS Capacitance
- I/O Capacitance
️· Important Note: Capacitance is sampled, meaning it’s not continuously tested.
4. AC Test Conditions:
️· Sets parameters for AC timing measurements:
- Input Pulse Levels
- Input Rise/Fall Times
- Timing Reference Levels
- Output Load (specifies the impedance and capacitance connected to the output)
5. AC Electrical Characteristics – Timing (ns):
️· This is the most complex section, outlining the timing parameters for read and write cycles. It presents a table of values for:
- Read Cycle: Read Cycle Time, Address Access Time, Chip Select Access Time, Output Hold Time, Chip Select to Output Low-Z, Chip Select to Output High-Z, Output Enable Access Time, Output Enable to Output Low-Z, and Output Disable to Output High-Z.
- Write Cycle: Write Cycle Time, Chip Select to End of Write, Address Valid to End of Write, Address Setup Time, Address Hold Time, Write Pulse Width (controlled by different signals), Data Setup Time, Data Hold Time, Write Enable to Output Low-Z, Write Enable to Output High-Z.
️· Again, these values are given for different temperature ranges.
Key Observations & Likely Target Audience:
️· Target Audience: This datasheet excerpt is intended for electrical engineers and technicians responsible for designing circuits that use the AS8SLC128K32 SRAM. They need the detailed timing information to ensure proper operation.
️· Type of SRAM: The part is a synchronous SRAM, as evidenced by the timing parameters and the references to signals like WE\ (Write Enable) and OE\ (Output Enable).
️· Legacy Part: The "Rev. 0.8 01/10" suggests this is a relatively older part, which is common with Micross Components, as they often support legacy devices.
| Part No. | AS8SLC128K32 |
| Manufacturer | MICROSS |
| Size | 141 Kbytes |
| Pages | 10 pages |
| Description | Fast Access Times of 10 to 25ns |
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