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Hello, Please ask a question about SCT50N120 Datasheet
# Example questions:
➢ What is the reverse recovery time (trr) of the internal sic diode when the forward current is 40a and the rate of change of current is 2000 a/µs?
➢ What is the typical static drain-source on-resistance (rds(on)) of the device at a junction temperature of 150°c with a gate voltage of 20v and a drain current of 40a?
➢ What should be checked on st’s website to verify the environmental compliance grade of this device?
| Part No. | SCT50N120 |
| Manufacturer | STMICROELECTRONICS |
| Size | 708 Kbytes |
| Pages | 11 pages |
| Description | High voltage DC-DC converters |
## Summary of the STMicroelectronics SCT50N120 Datasheet
This document is a datasheet for the SCT50N120, a 650V N-channel Silicon Carbide (SiC) MOSFET intended for high-voltage, high-current applications like power factor correction, switched-mode power supplies, and motor drives. Here's a breakdown of the key information:
Key Features & Specifications:
️· Voltage: 650V
️· Current: Designed for high current operation
️· On-Resistance (RDS(on)): Typically 52-69 mΩ at 20V VGS and 40A ID, increasing to 59 mΩ at TJ = 150°C.
️· Package: TO-247
️· Dynamic Parameters: Includes values for Ciss, Coss, Crss, Qg, Qgs, and Qgd.
️· Switching Performance: Provides values for turn-on (Eon) and turn-off (Eoff) switching energies.
️· SiC Diode Characteristics: Specifies forward voltage (VSD), reverse recovery time (trr), and other parameters for the integrated SiC diode.
Key Highlights:
️· SiC Technology: Offers advantages over traditional silicon MOSFETs, including lower switching losses, higher temperature operation, and higher breakdown voltage.
️· Low On-Resistance: Minimizes conduction losses, improving efficiency.
️· Comprehensive Datasheet: Provides detailed electrical characteristics, graphs, and package information.
️· ECOPACK: Available in environmentally friendly ECOPACK packages.
Document Organization:
## Summary of the STMicroelectronics SCT50N120 Datasheet
This document is a datasheet for the SCT50N120, a 650V N-channel Silicon Carbide (SiC) MOSFET intended for high-voltage, high-current applications like power factor correction, switched-mode power supplies, and motor drives. Here's a breakdown of the key information:
Key Features & Specifications:
️· Voltage: 650V
️· Current: Designed for high current operation
️· On-Resistance (RDS(on)): Typically 52-69 mΩ at 20V VGS and 40A ID, increasing to 59 mΩ at TJ = 150°C.
️· Package: TO-247
️· Dynamic Parameters: Includes values for Ciss, Coss, Crss, Qg, Qgs, and Qgd.
️· Switching Performance: Provides values for turn-on (Eon) and turn-off (Eoff) switching energies.
️· SiC Diode Characteristics: Specifies forward voltage (VSD), reverse recovery time (trr), and other parameters for the integrated SiC diode.
Key Highlights:
️· SiC Technology: Offers advantages over traditional silicon MOSFETs, including lower switching losses, higher temperature operation, and higher breakdown voltage.
️· Low On-Resistance: Minimizes conduction losses, improving efficiency.
️· Comprehensive Datasheet: Provides detailed electrical characteristics, graphs, and package information.
️· ECOPACK: Available in environmentally friendly ECOPACK packages.
Document Organization:
| Part No. | SCT50N120 |
| Manufacturer | STMICROELECTRONICS |
| Size | 708 Kbytes |
| Pages | 11 pages |
| Description | High voltage DC-DC converters |
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