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Hello, Please ask a question about BR8N60 Datasheet
# Example questions:
➢ What is the maximum drain current (id) the brn60 can handle at a case temperature of 25°c?
➢ What is the typical gate threshold voltage (vgs(th)) of the brn60?
➢ Describe the temperature profile requirements for wave soldering the brn60, specifically the preheating temperature and duration.
BR8N60 MOSFET Datasheet Summary
1. General Description:
️· Type: N-Channel MOSFET
️· Package: TO-220
️· Application: Designed for high-efficiency DC/DC converters and power switching applications.
2. Features:
️· Low gate charge (Qg)
️· Low reverse transfer capacitance (Crss)
️· Fast switching speed
3. Key Electrical Characteristics (at 25°C unless noted):
️· Drain-Source Voltage (Vdss): 600V
️· Drain Current (Id at 25°C): 8A
️· Drain Current (Id at 100°C): 4.6A
️· Gate-Source Voltage (Vgs): ±30V
️· Gate Threshold Voltage (Vgs(th)): 2.0 - 4.0V
️· Drain-Source On-Resistance (Rds(on)): 1.0 - 1.2 Ohms (at Vgs=10V, Id=3.75A)
️· Input Capacitance (Ciss): 965 - 1255 pF
️· Output Capacitance (Coss): 105 - 135 pF
️· Reverse Transfer Capacitance (Crss): 12 - 16 pF
4. Marking Information:
️· Includes company code (BR), part number (8N60), and a production batch code.
5. Soldering Information:
️· Provides guidelines for peak reflow temperature and duration.
6. Packaging:
️· Available in both Bulk and Tube packaging options, with specified quantities per package.
7. Important Notes:
️· Datasheet emphasizes the importance of proper operating conditions and adherence to the provided specifications for reliable performance.
BR8N60 MOSFET Datasheet Summary
1. General Description:
️· Type: N-Channel MOSFET
️· Package: TO-220
️· Application: Designed for high-efficiency DC/DC converters and power switching applications.
2. Features:
️· Low gate charge (Qg)
️· Low reverse transfer capacitance (Crss)
️· Fast switching speed
3. Key Electrical Characteristics (at 25°C unless noted):
️· Drain-Source Voltage (Vdss): 600V
️· Drain Current (Id at 25°C): 8A
️· Drain Current (Id at 100°C): 4.6A
️· Gate-Source Voltage (Vgs): ±30V
️· Gate Threshold Voltage (Vgs(th)): 2.0 - 4.0V
️· Drain-Source On-Resistance (Rds(on)): 1.0 - 1.2 Ohms (at Vgs=10V, Id=3.75A)
️· Input Capacitance (Ciss): 965 - 1255 pF
️· Output Capacitance (Coss): 105 - 135 pF
️· Reverse Transfer Capacitance (Crss): 12 - 16 pF
4. Marking Information:
️· Includes company code (BR), part number (8N60), and a production batch code.
5. Soldering Information:
️· Provides guidelines for peak reflow temperature and duration.
6. Packaging:
️· Available in both Bulk and Tube packaging options, with specified quantities per package.
7. Important Notes:
️· Datasheet emphasizes the importance of proper operating conditions and adherence to the provided specifications for reliable performance.
| Part No. | BR8N60 |
| Manufacturer | FOSHAN |
| Size | 954 Kbytes |
| Pages | 6 pages |
| Description | N-CHANNEL MOSFET in a TO-220 Plastic Package |
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