1200 Datasheet(PDF) - CAB011M12FM3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	CAB011M12FM3	2Mb/11P	1200 V, 11 m廓 All-Silicon Carbide
	CCB032M12FM3	1Mb/11P	1200 V, 32 m廓 All-Silicon Carbide Six-Pack Module
	CAB016M12FM3	2Mb/11P	1200 V, 16 m廓 All-Silicon Carbide Half-Bridge Module
	CCB021M12FM3	1Mb/11P	1200 V, 21 m廓 All-Silicon Carbide Six-Pack Module
	CGHV14500	1Mb/11P	500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
	CGHV14250	1Mb/11P	250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
	CAB400M12XM3	801Kb/9P	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module
	PTVA127002EV	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 ??1400 MHz
	PTVA120501EA	683Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
	PTVA123501EC	753Kb/14P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz
	CGHV14800	765Kb/9P	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
	GTVA126001EFC	615Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
	CRD15DD17P	434Kb/1P	15DD17P: Wide Input Voltage Range (300 VDC 1200 VDC) 15 W Flyback Auxiliary Power Supply Board
	GTVA123501FA	285Kb/4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 ??1400 MHz
	GTVA126001EC	615Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz

1200 Arkusz danych, PDF