| Producent | Numer części | Arkusz danych | Szczegółowy opis |

NXP Semiconductors
|
BD941 |
331Kb/7P |
SILICON EPITAXIAL BASE POWER TRANSISTORS August 1991 |
| BD941F |
289Kb/6P |
SILICON EPITAXIAL BASE POWER TRANSISTORS August 1991 |
| BLF0810-180 |
117Kb/16P |
Base station LDMOS transistors 2003 Jun 12 |
| BLF0810-90 |
108Kb/16P |
Base station LDMOS transistors 2003 Jun 12 |
| BLF900S-110 |
137Kb/13P |
Base station LDMOS transistors 2004 Feb 04 |
| BLF1049 |
110Kb/12P |
Base station LDMOS transistor 2003 May 14 |
| SAA8200HL |
298Kb/71P |
Ensation Base integrated wireless audio baseband Rev. 02-17 October 2005 |
| TC8500 |
1Mb/82P |
Sistemas de Conmutador-Control Microprocesador-Base Allegiant 1997 |
| 2N3553 |
45Kb/8P |
Silicon planar epitaxial overlay transistor 1995 Oct 27 |
| 2N3866 |
45Kb/9P |
Silicon planar epitaxial overlay transistors 1995 Oct 27 |
| BLF6G10L |
284Kb/15P |
260 W LDMOS power transistor for base station applications Rev. 2-12 July 2013 |
| PL81 |
1Mb/29P |
PENTODE FOR USE AS LINE TIME BASE OUTPUT TUBE 2.2.1959 |
| LLE18100X |
60Kb/9P |
NPN silicon planar epitaxial microwave power transistor November 1994 |
| LLE18150X |
52Kb/9P |
NPN silicon planar epitaxial microwave power transistor September 1994 |
| LFE18500X |
62Kb/10P |
NPN silicon planar epitaxial microwave power transistor December 1994 |