1200 MHZ TO 3600 Datasheet(PDF) - CAB425M12XM3

Producent	Numer części	Arkusz danych	Szczegółowy opis
WOLFSPEED, INC.	CAB425M12XM3	774Kb/9P	1200 V, 425 A All-Silicon Carbide Switching-Optimized, Half-Bridge Module Rev. -, 2020-01-28
	CAB400M12XM3	801Kb/9P	1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module Rev. -, 2019-10-31
	CAS480M12HM3	1Mb/11P	1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2022-02-25
	E4D20120A	1Mb/9P	E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Rev. 1, April 2023
	CMPA0060002F	2Mb/10P	2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Rev. 3.3, 2022-12-8
	CMPA0060025F	4Mb/12P	25 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Rev. 4.3, 2022-12-13
	E4D10120A	1Mb/9P	E-Series Automotive 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Rev. 1, March 2023
	CAS300M12BM2	776Kb/11P	1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2021-02-08
	CAS120M12BM2	968Kb/11P	1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 1, 2020-11-11
	EAB450M12XM3	1Mb/11P	Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module Rev. A 2020-10-07
	WAB300M12BM3	1Mb/12P	1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Rev. A 2020-05-20
	WAB400M12BM3	1Mb/12P	1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module Rev. A 2020-05-22
	CMPA2560025F	999Kb/12P	25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Rev 3.1 April 2020
	CGH55030F1-P1	1Mb/13P	30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Rev. 4.2, 2022-12-13
	CMPA0060025F1	2Mb/11P	25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Rev. 0.1, 2022-12-12
	CMPA0060025D	1Mb/8P	25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Rev. 2.3, 2022-12-13
	CGHV14500	3Mb/20P	500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Rev. 5.0, 2022-7-27
	CGHV35150	1Mb/10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev.1.4, 2022-12-2
	PTRA084808NF	881Kb/12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz Rev. 03.4, 2022-1-27
	PTVA102001EA	540Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz Rev. 05, 2023-07-10

1200 MHZ TO 3600 Arkusz danych, PDF

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