| Producent | Numer części | Arkusz danych | Szczegółowy opis |
WOLFSPEED, INC.
|
GTRA362802FC-V1 |
553Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz
Rev. 04.3, 2022-1-27 |
| GTRA374902FC |
459Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz
Rev. 02.2, 2022-1-27 |
| GTRA362002FC-V1 |
435Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz
Rev. 06, 2023-06-23 |
| GTRA384802FC-V1 |
585Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz
Rev. 03.1, 2022-1-27 |
| GTRA364002FC |
511Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz
Rev. 04.3, 2022-1-27 |
| PTVA127002EV |
691Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz
Rev. 05, 2023-07-10 |
| PTVA120501EA |
695Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
Rev. 04, 2023-07-10 |
| CAB008A12GM3 |
2Mb/12P |
1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module
Rev. 1, April 2023 |
| CAB011M12FM3 |
2Mb/12P |
1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module
Rev. 3, May 2023 |
| CAS175M12BM3 |
3Mb/12P |
1200 V, 175 A, Silicon Carbide, Half-Bridge Module
Rev. 0, JUNE 2022 |
| CBB021M12FM3 |
2Mb/12P |
1200 V, 21 mΩ, Silicon Carbide, Full-Bridge Module
Rev. 2, April 2023 |
| CBB032M12FM3 |
2Mb/12P |
1200 V, 32 mΩ, Silicon Carbide, Full-Bridge Module
Rev. 2, April 2023 |
| CAB006M12GM3 |
2Mb/12P |
1200 V, 6 mΩ, Silicon Carbide, Half-Bridge Module
Rev. 2, April 2023 |
| CAB008M12GM3 |
2Mb/12P |
1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module
Rev. 2, April 2023 |
| CCB021M12FM3 |
3Mb/12P |
1200 V, 21 mΩ, Silicon Carbide, Six-Pack Module
Rev. 2, April 2023 |
| WAS350M12BM3 |
3Mb/12P |
1200 V, 350 A, Silicon Carbide, Half-Bridge Module
Rev. 0 JUNE 2022 |
| CAB011A12GM3 |
2Mb/11P |
1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module
Rev. 1, May 2023 |
| CCB032M12FM3 |
3Mb/12P |
1200 V, 32 mΩ, Silicon Carbide, Six-Pack Module
Rev. 2, April 2023 |
| WAS175M12BM3 |
3Mb/12P |
1200 V, 175 A, Silicon Carbide, Half-Bridge Module
Rev. 0 JUNE 2022 |
| CAR600M12HN6 |
785Kb/7P |
1200 V, 600 A, Silicon Carbide, Half-Bridge Rectifier
Rev. 01, FEBRUARY 2022 |
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