| Producent | Numer części | Arkusz danych | Szczegółowy opis |
Cree, Inc
|
GTRA362002FC |
233Kb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz |
| GTRA364002FC |
279Kb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz |
| GTRA374902FC |
2Mb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz |
| GTRA384802FC |
1Mb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz |
| GTRA362802FC |
282Kb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz |
| CGHV14250 |
1Mb/11P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems |
| CGHV14500 |
1Mb/11P |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems |
| PTVA127002EV |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 ??1400 MHz |
| PTVA120501EA |
683Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz |
| PTVA123501EC |
753Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz |
| CGHV14800 |
765Kb/9P |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems |
| GTVA126001EFC |
615Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz |
| GTVA126001EC |
615Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz |
| GTVA123501FA |
285Kb/4P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 ??1400 MHz |
| CAB011M12FM3 |
2Mb/11P |
1200 V, 11 m廓 All-Silicon Carbide |
| CCB032M12FM3 |
1Mb/11P |
1200 V, 32 m廓 All-Silicon Carbide Six-Pack Module |
| CAB016M12FM3 |
2Mb/11P |
1200 V, 16 m廓 All-Silicon Carbide Half-Bridge Module |
| CCB021M12FM3 |
1Mb/11P |
1200 V, 21 m廓 All-Silicon Carbide Six-Pack Module |
| CMPA0060002F |
961Kb/9P |
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier |
| CMPA0060025F |
1Mb/11P |
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier |
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