| Producent | Numer części | Arkusz danych | Szczegółowy opis |

Hamamatsu Corporation
|
S4111 |
138Kb/4P |
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR |
| S9674 |
311Kb/3P |
Suitable for lead-free solder refl ow, operating/storage temperature: -40 to +125 째C |
| S3979 |
332Kb/4P |
One-dimensional PSD 3 to 37 mm resistance length PSD for precision distance measurement |
| G11135-256DD |
290Kb/10P |
Single video line (256/512 pixels) near infrared image sensor (0.95 to 1.7 m) |
| C10633 |
217Kb/2P |
Good sensitivity in 900 nm to 1700 nm range 320 횞 256 pixels with EIA |
| S1722-02 |
96Kb/2P |
Si PIN photodiode Large area, high-speed PIN photodiodes for UV to near IR photometry |
| S2592 |
132Kb/4P |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR |
| S9674 |
63Kb/2P |
Si photodiode Suitable for lead-free solder reflow, operating/storage temperature: -40 to +125 째C |
| G11620 |
288Kb/11P |
Single video line (128/256/512 pixels) near infrared image sensor (0.95 to 1.7 關m) |
| G10768 |
304Kb/7P |
Near infrared image sensor (0.9 to 1.7 m) with 1024 pixels and high-speed line rate |
| C9329 |
437Kb/4P |
Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise |
| R375 |
43Kb/2P |
160 nm to 850 nm Response (Multialkali) 51 mm (2 Inch) Diameter, 10-stage, Head-on Type |
| C9329 |
270Kb/3P |
Photosensor amplifier Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise |
| R550 |
51Kb/2P |
300 nm to 850 nm Response (S-20) 51 mm (2 Inch) Diameter, 10-stage, Head-on Type |
| R374 |
26Kb/2P |
Multialkali Photocathode for UV to Near IR Range 28 mm (1-1/8 Inch) Diameter, 11-stage Head-On Type |