| Producent | Numer części | Arkusz danych | Szczegółowy opis |

SPANSION
|
MBM29PL64LM |
797Kb/69P |
Flash Memory 64 M (8M X 8/4M X 16) BIT |

SeCoS Halbleitertechnol...
|
SMG5409 |
1Mb/4P |
-2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET |
| SSE90N06-10P |
617Kb/4P |
90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET |
| STT6802 |
1Mb/4P |
3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET |

Renesas Technology Corp
|
NR8800FS-CB |
206Kb/10P |
? 80 關m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS |

Texas Instruments
|
DS91M124 |
342Kb/14P |
DS91M124 125 MHz 1:4 M-LVDS Repeater with LVCMOS Input |

Fairchild Semiconductor
|
FDMC8622 |
343Kb/7P |
N-Channel Power Trench짰 MOSFET 100 V, 16 A, 56 m |
| FDME430NT |
264Kb/6P |
N-Channel PowerTrench짰 MOSFET 30 V, 6 A, 40 m廓 |
| FDME510PZT |
254Kb/7P |
P-Channel PowerTrench짰 MOSFET -20 V, -6 A, 37 m廓 |
| FDMS8570S |
305Kb/8P |
N-Channel PowerTrench짰 SyncFETTM 25 V, 60 A, 2.8 m廓 |
| FDMS86250 |
272Kb/7P |
N-Channel PowerTrench짰 MOSFET 150 V, 20 A, 25 m廓 |
| FDT86256 |
251Kb/6P |
N-Channel PowerTrench짰 MOSFET 150 V, 1.2 A, 845 m廓 |

Infineon Technologies A...
|
SIDC06D60F6 |
115Kb/4P |
Fast switching diode 600V Emitter Controlled technology 70 關m chip Edition 2.1, 09.03.2010 |
| SIDC07D60AF6 |
114Kb/4P |
Fast switching diode 600V Emitter Controlled technology 70 關m chip Edition 2.1, 09.03.2010 |

NXP Semiconductors
|
PSMN3R5-80ES |
238Kb/15P |
N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02-19 April 2011 |

Ralston Instruments.
|
QSQS-HOS-2M |
320Kb/1P |
Quick-test hose, S.S. hose ends, 2 m (6.6 ft) long |

Fairchild Semiconductor
|
FDMC6679AZ |
305Kb/7P |
P-Channel PowerTrench짰 MOSFET -30 V, -20 A, 10 m廓 |
| FDMC7672 |
215Kb/7P |
N-Channel Power Trench짰 MOSFET 30 V, 16.9 A, 5.7 m |
| FDMS7658AS |
476Kb/8P |
N-Channel PowerTrench짰 SyncFETTM 30 V, 49 A, 1.9 m廓 |
| FDS8882 |
286Kb/6P |
N-Channel PowerTrench짰 MOSFET 30 V, 9 A, 20.0 m廓 |