Producent | Numer części | Arkusz danych | Szczegółowy opis |
Motorola, Inc
|
MTW10N40E |
70Kb/2P |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
MTW8N50E |
70Kb/2P |
TMOS E FET POWER FIELD EFFECT TRANSISTOR |
SamHop Microelectronics...
|
SDM9435A |
359Kb/5P |
P -Channel E nhancement Mode MOS FET |
ON Semiconductor
|
MMFT3055E |
196Kb/7P |
N-Channel TMOS E-FET Power MOSFET August, 2006 ??Rev. 5 |
Motorola, Inc
|
MTH8N50E |
631Kb/6P |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
MTA1N60E |
854Kb/13P |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
Hitachi Semiconductor
|
PF01411B |
26Kb/4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
PF01412A |
25Kb/4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
PF0027 |
287Kb/7P |
MOS FET Power Ampllfier Module for E-TACS Handy Phone |
PF01411A |
25Kb/4P |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
ON Semiconductor
|
MTD10N10EL |
93Kb/8P |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount March, 2004 ??Rev. 1 |
Diodes Incorporated
|
ZVN4306A |
366Kb/6P |
60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN E-LINE |
Advantech Co., Ltd.
|
ENV-49A-AP01 |
505Kb/2P |
E&E/Patrol Inspection 12-Mar-2021 |
Renesas Technology Corp
|
ISL81807 |
1,006Kb/41P |
80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET Mar 22, 2022 |
ISL81806 |
943Kb/42P |
80V Dual Synchronous Buck Controller Optimized to Drive E-mode GaN FET Jan 28, 2022 |
Motorola, Inc
|
MTW4N80 |
70Kb/2P |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Hitachi Semiconductor
|
PF08103A |
42Kb/8P |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Renesas Technology Corp
|
PF08109B |
249Kb/25P |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor
|
PF08103B |
34Kb/7P |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Powertip Technology
|
PC1602-E |
74Kb/1P |
PC1602-E |