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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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US6T9 Arkusz danych(PDF) 1 Page - Rohm |
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US6T9 Arkusz danych(HTML) 1 Page - Rohm |
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1 / 3 page  US6T9 Transistors Rev.A 1/2 General purpose amplification ( −30V, −1A) US6T9 Application Low frequency amplifier Driver Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −350mV At IC = −500mA / IB = −25mA External dimensions (Unit : mm) 0.15Max. (2) (5) (1) (3) (6) (4) 1.7 0.2 0.2 2.1 ROHM : TUMT6 Abbreviated symbol : T09 1pin mark Absolute maximum ratings (Ta=25 °C) Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −30 −30 −6 −1 400 150 −55 to +150 −2 ∗1 Unit V V V A A mW/TOTAL °C °C ∗2 1.0 W/TOTAL ∗3 0.7 WELEMENT ∗3 ∗1 ∗2 ∗3 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Single pulse, PW =1ms Each Terminal Mounted on a Recommended Mounted on a 25mm ×25mm× 0.8mm Ceramic substrate t Equivalent circuit (4) (5) (6) (1) (2) (3) Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions VCB =−10V, IE=0A, f=1MHz fT − 320 − MHz VCE =−2V, IE=100mA, f=100MHz BVCBO −30 −− V IC =−10µA BVCEO −30 −− V IC =−1mA BVEBO −6 −− V IE =−10µA ICBO −− −100 nA VCB =−30V IEBO −− −100 nA VEB =−6V VCE(sat) −−150 −350 mV IC =−500mA, IB=−25mA hFE 270 − 680 − VCE =−2V, IC=−100mA Cob − 7 − pF ∗ ∗ Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed |
Podobny numer części - US6T9 |
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Podobny opis - US6T9 |
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