APM2518N datasheet(3/10 Pages) SINOPWER

Numer części	APM2518N

Szczegółowy opis	N-Channel Enhancement Mode MOSFET

PDF	10 Pages

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Producent	SINOPWER [Sinopower Semiconductor Inc]

Strona internetowa	http://www.sinopowersemi.com/Form2/index.aspx

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APM2518NU

®

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.4 - December, 2016

Electrical Characteristics (Cont.) (T

A=25°C Unless Otherwise Noted)

APM2518NU

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Dynamic Characteristics

b

RG

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

-

2.5

-

W

Ciss

Input Capacitance

-

1080

-

Coss

Output Capacitance

-

200

-

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

-

170

-

pF

td(ON)

Turn-on Delay Time

-

12

22

tr

Turn-on Rise Time

-

11

21

td(OFF)

Turn-off Delay Time

-

35

64

tf

Turn-off Fall Time

VDD=15V, RL=15W,

IDS=1A, VGEN=10V,

RG=6W

-

17

32

ns

Gate Charge Characteristics

b

Qg

Total Gate Charge

-

18

25

Qgs

Gate-Source Charge

-

2.7

-

Qgd

Gate-Drain Charge

VDS=15V, VGS=10V,

IDS=30A

-

8

-

nC

Note a : Pulse test ; pulse width

£300

ms, duty cycle£2%.

Note b : Guaranteed by design, not subject to production testing.

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APM2518N Arkusz danych(PDF) 3 Page - Sinopower Semiconductor Inc

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Podobny numer części - APM2518N

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